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PDF EMB12K03V Data sheet ( Hoja de datos )
| Número de pieza | EMB12K03V | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de EMB12K03V (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
N‐CH‐Q1 N‐CH‐Q2
BVDSS
RDSON (MAX.)
30V
12mΩ
30V
17mΩ
ID 12A 10A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB12K03V
LIMITS
Q1 Q2
±20 ±20
12 10
8.5 7
48 40
12 12
7.2 7.2
3.6 3.6
2.00
2.00
0.8 0.8
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/11/15
TYPICAL
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page  
TYPICAL CHARACTERISTICS
EMB12K03V
On‐Region Characteristics
50
10V
7V
On‐Resistance Variation with Drain Current and Gate Voltage
3
40 6V
5V
30
20
VG S = 4.5V
10
2.5
2
VG S = 4.5V
1.5
1
5V
6V
7V
10V
0
01
2
34 5
0.5
0 10 20 30 40 50
VD S ‐ Drain Source Voltage( V )
I D ,Drain Current( A )
On‐Resistance Variation with Temperature
1.8
I D = 12A
VG S = 10V
1.6
0.08 On‐Resistance Variation with Gate‐Source Voltage
0.07 I D = 6 A
1.4
0.06
0.05
1.2
0.04
1.0
0.8
0.03
0.02 T A = 125°C
0.01 T A = 25°C
0.6
0
‐50 ‐25
0 25 50 75 100 125 150
Tj ,Junction Temperature(°C )
24
6
8
VG S ‐ Gate‐Source Voltage( V )
10
Transfer Characteristics
50
Body Diode Forward Voltage Variation with
Source Current and Temperature
60
V D S = 10V
40
T A = ‐55 °C
25 °C
VG S = 0V
10
TA = 125°C
30
20
125 °C
1
0.1
0.01
25°C
‐55°C
10
0.001
0
012
3
45
0.0001 0
0.2
0.4
0.6
0.8
1.0 1.2 1.4
VG S ,Gate‐Source Voltage( V )
VS D ,Body Diode Forward Voltage( V )
2013/11/15
p.5
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet EMB12K03V.PDF ] | |
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