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What is EMF20A02V?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMF20A02V Datasheet PDF - Excelliance MOS

Part Number EMF20A02V
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMF20A02V download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMF20A02V datasheet, circuit

 
 
Dual NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
20V 
RDSON (MAX.) 
20mΩ 
ID  6A 
 
UIS 100% Tested 
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMF20A02V
LIMITS 
UNIT 
GateSource Voltage 
VGS 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
ID 
IDM 
Avalanche Current 
IAS 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=10A, RG=25Ω 
L = 0.05mH 
EAS 
EAR 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
PD 
Tj, Tstg 
100% UIS testing in condition of VD=10V, L=0.1mH, VG=4.5V, IL=6A, Rated VDS=20V NCH
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
±12 
6 
4 
24 
10 
5 
2.5 
2 
0.8 
55 to 150 
MAXIMUM 
V 
A 
mJ 
W 
°C 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
25 
62.5 
°C / W 
2013/1/11 
p.1 

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EMF20A02V equivalent
 
 
 5
 GateCharge Characteristics
ID = 6A
 
4
 
 3
VDS= 5V
10V
 2
 
 1
 
900
750
600
450
300
150
EMF20A02V
 Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
Coss
Crss
 0
0 2 4 6 8 10 12 14
  Qg, Gate Charge ( nC )
0
05
10 15
20
VDS, DrainSource Voltage( V )
 
  100
Maximum Safe Operating Area
  RDS(ON) LIMIT
10
 
 1
 
  VGS =4.5V
0.1 SINGLE PULSE
RθJA=125°C/W
  TA=25°C
100μs
1ms
10ms
100ms
1s
DC
  0.01
0.1
 
1 10
VDS,DrainSource Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 125°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
 
 1
  Duty Cycle = 0.5
Transient Thermal Response Curve
  0.2
0.1
  0.1
0.05
 
0.02
  0.01
0.01
Single Pulse
0.001
10 4
10 3
10 2
10 1
t 1 ,Time (sec)
1
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J  A =125°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
2013/1/11 
p.5 


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
EMF20A02GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMF20A02VThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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