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What is EMBJ7A25V?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMBJ7A25V Datasheet PDF - Excelliance MOS

Part Number EMBJ7A25V
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Dual NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
250V 
RDSON (MAX.) 
1.7Ω 
ID  0.5A 
 
Rg 100% Tested 
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
PD 
Tj, Tstg 
EMBJ7A25V
LIMITS 
±20 
0.5 
0.3 
2 
2 
1.3 
55 to 150 
UNIT 
V 
A 
W 
°C 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
 
 
2012/8/6 
TYPICAL 
 
 
MAXIMUM 
25 
62.5 
UNIT 
°C / W 
p.1 

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EMBJ7A25V equivalent
  EMBJ7A25V
 
 
  10
Gate Charge Characteristics
  I D  = 0.25A
 8
 6
 
 4
VD  S   = 62V 125V
 2
 
0
 0
 
  10
5 10 15
Q g  ‐ Gate Charge( nC )
M a x im u m  S a fe  O p e ra tin g  A re a
   1 R   D S  (O  N  )L im it
 
0 .1
 
10uS
100uS
1mS
D
1
C
0
0
m
10m
S
S
 
0 .1 0
      V G   S  =  1 0 V
S in g le  P u lse
R    JA    =   1 2 5 ° C / W
      T A      =   2 5 ° C
0 .0 0 1
1 10 100
  V D   S    ‐   D r a i n S o u r c e   V o l t a g e (   V  )
20
1000
1000
900
800
Capacitance Characteristics
f  =  1M Hz
V  G S  =  0  V
700 Ciss
600
500
400
300
200
100 Coss
0 Crss
0 20 40 60 80
VD  S ‐ D ra in S o u rc e  V o lta g e ( V  )
100
Single Pulse Maximum Power Dissipation
5
SINGLE PULSE
VGS= 10V
4
RθJA=125°C/W
TA=25°C
3
2
1
0
0.1 1
10 100 1000
Single Pulse Time( sec )
 
 1
Transient Thermal Response Curve
  D=0.5
0.5
  0.2
0.2
  0.1
0.1
  0.05
0.05 0.02
  0.01
0.02
Single Pulse
 
0.01
  0.0001
0.001
0.01 0.1
1
t1, Time( sec )
 
RθJA(t) = r(t) * RθJA
RθJA=125°C/W
t1
t2
TJTA=P*RθJA(t)
Duty Cycle, D= t1/ t2
10 100 300
 
 
 
 
 
2012/8/6 
p.5 


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Featured Datasheets

Part NumberDescriptionMFRS
EMBJ7A25GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMBJ7A25VThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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