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Número de pieza | EMB11A03G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB11A03G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
11mΩ
ID 12A
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=12A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 70 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB11A03G
LIMITS
±20
12
8.5
48
12
7.2
3.6
2
1.28
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/1/8
TYPICAL
MAXIMUM
25
62.5
UNIT
°C / W
p.1
1 page 12
G a te C h a rg e C h a ra c te ris tic s
ID = 1 2 A
10
8
6
V DS =5V
15V
10V
4
2
0
0 4 8 12 16 20 24 28
Q g ,G a te C h a rg e ( n C )
100
Maximum Safe Operating Area
R D S (O N ) Limit
10
100μs
1ms
10ms
100ms
1
1s
10s
DC
0.1
VG S = 10V
Single Pulse
R JA = 125°C/W
TA = 25°C
0.01
0.1 1
10
VD S ‐ Drain‐Source Voltage( V )
100
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
t 1 ,Time (sec)
1
EMB11A03G
10 4
C A P A C IT A N C E C H A R A C T E R IS T IC S
10 3
C iss
10 2
C o ss
C rss
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D R A IN ‐S O U R C E V O L T A G E ( V )
30
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 125° C/W
40 TA = 25° C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A =125°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2013/1/8
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB11A03G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB11A03G | Field Effect Transistor | Excelliance MOS |
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