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What is EMB55A03G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB55A03G Datasheet PDF - Excelliance MOS

Part Number EMB55A03G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 5 Pages



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Dual NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
RDSON (MAX.) 
55mΩ 
ID  4.5A 
 
UIS, 100% Tested 
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 70 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=4.5A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TA = 25 °C 
TA = 70 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
EMB55A03G
LIMITS 
±20 
4.5 
3.3 
18 
4.5 
1 
0.5 
2 
1.3 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
2013/8/30 
TYPICAL 
 
 
MAXIMUM 
25 
62.5 
UNIT 
°C / W 
p.1 

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EMB55A03G equivalent
 
 
10
 GateCharge Characteristics
  ID = 4.5A
 8
VDS= 5V
15V
 6
 
 4
10V
 2
 
 
0
01 23456
  Qg, Gate Charge( nC )
 
100
 
Maximum Safe Operating Area
  10 R D S ( O  N  ) Limit
100μs
  1ms
 1
 
10ms
100ms
1s
10s
    VG  S = 10V
0.1 Single Pulse
DC
  R  J A  = 125°C/W
  T A  = 25°C
  0.01
0.1
 
1 10
VD  S  ‐ DrainSource Voltage( V )
100
 
 1
Duty Cycle = 0.5
 
0.2
  0.1
0.1
  0.05
Transient Thermal Response Curve
  0.02
0.01
  0.01
Single Pulse
0.001
10 4
10 3
10 2
10 1
t 1 ,Time (sec)
1
 
500
400
300
200
100
0
0
EMB55A03G
 Capacitance Characteristics
f = 1MHz
V =GS   0V
C iss
Coss
Crss
5 10 15 20 25
VDS,DrainSource Voltage( V )
30
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 125° C/W
40 TA  = 25° C
30
20
10
0
0.001
0.01 0.1
1
10
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J  A =125°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) * RθJA
10 100
1000
2013/8/30 
p.5 


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Featured Datasheets

Part NumberDescriptionMFRS
EMB55A03GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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