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What is EMB90A08G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB90A08G Datasheet PDF - Excelliance MOS

Part Number EMB90A08G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 5 Pages



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No Preview Available ! EMB90A08G datasheet, circuit

 
 
Dual NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
80V 
RDSON (MAX.) 
85mΩ 
ID  4.5A 
 
UIS, Rg 100% Tested 
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=6A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
2013/7/24 
EMB90A08G
LIMITS 
±20 
4.5 
3.2 
18 
6 
1.8 
0.9 
2 
0.8 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
25 
62.5 
UNIT 
°C / W 
p.1 

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EMB90A08G equivalent
  EMB90A08G
 
 
 
Gate Charge Characteristics
  10
I D  = 4.5A
 
8
 
  6 V D S  = 20V 40V
 4
 
2
 
 0
02
4 6 8 10 12 14
  Q g  ‐ Gate Charge( nC )
1000
900
800
700
600
500
400
300
200
100
0
0
Ciss
Coss
Crss
10
Capacitance Characteristics
f  =  1MHz
V G S  = 0 V
20 30 40 50
VD  S ‐ DrainSource Voltage( V )
60
 
M a xim u m  S a fe  O p e ra tin g  A re a
  100
 
  1 0 R  D  S ( O  N )Lim it
 1
 
  0.1
10uS
100uS
1mS
10mS
10
DC
0
m
S
    V G  S =  1 0 V
S in g le  P u lse
R    JA =   1 2 5 ° C / W
    T A     =   2 5 ° C
  0.01
0 .1
1
10 100
V D   S    ‐   D r a in S o u r c e   V o lt a g e (   V  )
 
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 125°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
 
1
  Duty Cycle = 0.5
Transient Thermal Response Curve
  0.2
0.1
  0.1
0.05
  0.02
0.01
  0.01
Single Pulse
 
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.Rθ  J  A =125°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
  0.001
4.Rθ  J A (t)=r(t) + RθJA
  10 4
10 3
10 2
10 1
1
10
100 1000
t 1 ,Time (sec)
 
 
 
 
 
 
2013/7/24 
p.5 


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Part Details

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Featured Datasheets

Part NumberDescriptionMFRS
EMB90A08GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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