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What is EMBA5A10G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMBA5A10G Datasheet PDF - Excelliance MOS

Part Number EMBA5A10G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMBA5A10G download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMBA5A10G datasheet, circuit

 
 
Dual NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary:   
  NCH 
BVDSS 
RDSON (MAX.) 
100V 
150mΩ 
ID  3A 
 
 
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
 
 
2013/10/8 
EMBA5A10G
LIMITS 
±20 
3 
2.1 
12 
2 
0.8 
55 to 150 
UNIT 
V 
A 
W 
°C 
MAXIMUM 
25 
62.5 
UNIT 
°C / W 
p.1 

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EMBA5A10G equivalent
 
 
 
10
Gate Charge Characteristics
  I D  = 2A
 8
 
6
 
VD  S   = 50V 80V
 4
 
2
 
 
0
0
 
8 16
Q g  ‐ Gate Charge( nC )
24
32
 
  100
Maximum Safe Operating Area
 
10
   R  D S ( O  N  )Limit
1
 
 
0.1
1001u0SuS
1mS
10mS
DC100mS
  VG  S = 10V
Single Pulse
  0.01
R  JA = 125°C/W
TA   = 25°C
0.1 1 10 100 1000
  VD  S  ‐ DrainSource Voltage( V )
 
 1
Transient Thermal Response Curve
  Duty Cycle = 0.5
  0.2
0.1
0.1
  0.05
  0.02
0.01
  0.01
  Single Pulse
 
0.001
  10 4
 
10 3
10 2
10 1
t 1 ,Time (sec)
1
 
 
  EMBA5A10G
1500
1350
1200
1050
Capacitance Characteristics
f  =  1M Hz
V  G S  = 0 V
Ciss
900
750
600
450
300 Coss
150
0 Crss
0
20 40 60 80
VD  S ‐ D rainSource Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 125°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.R θ J  A =125°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
2013/10/8 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMBA5A10G electronic component.


Information Total 5 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMBA5A10GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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