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What is EMB12N03V?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB12N03V Datasheet PDF - Excelliance MOS

Part Number EMB12N03V
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMB12N03V download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMB12N03V datasheet, circuit

 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
D
RDSON (MAX.) 
11.5mΩ 
ID 
18.5A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
L = 0.1mH, ID=12A, RG=25Ω 
Repetitive Avalanche Energy2 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
PD 
Tj, Tstg 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
2013/8/16 
EMB12N03V
LIMITS 
±20 
18.5 
13.5 
74 
12 
7.2 
3.6 
21 
8.3 
2.5 
1 
55 to 150 
UNIT 
V 
A 
mJ 
W 
W 
°C 
MAXIMUM 
6 
50 
UNIT 
°C / W 
p.1 

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EMB12N03V equivalent
 
 
  12
ID = 1 2 A
G a te C h a rg e C h a ra c te ris tic s
  10
 
8
 
6
 
 4
V DS =5V
15V
10V
 2
 0
0
 
6 12
Q g ,G a te C h a rg e ( n C )
18
 
 
  100
Maximum Safe Operating Area
  R D S  (O  N  ) Limit
  10
100μs
1ms
10ms
 
 
1
100ms
1s
 
0.1
 
  VG  S = 10V
Single Pulse
R  J A  = 50°C/W
10s
DC
  T A  = 25°C
  0.01
  0.1
1 10
VD  S  ‐ DrainSource Voltage( V )
100
 
 1
 
  0.1
 
Duty Cycle = 0.5
0.2
0.1
0.05
Transient Thermal Response Curve
 
  0.01
 
0.02
0.01
Single Pulse
 0.001
  10 4
 
10 3
10 2
10 1
t 1 ,Time (sec)
1
 
 
 
 
2013/8/16 
 
10 4
C a p a c ita n c e  C h a ra c te ris tic s
10 3
C iss
10 2
C o ss
C rss
f =  1  M H z
V GS= 0  V
0 5 10 15 20 25
V DS ‐D ra in S o u rc e  V o lta g e ( V  )
30
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 50°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
Notes:
P DM
t1
t2
1.Duty Cycle,D =
t1
t2
2.R θ J A  =50°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
EMB12N03V
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB12N03V electronic component.


Information Total 5 Pages
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Featured Datasheets

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EMB12N03AThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMB12N03GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMB12N03HThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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