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EMB60N06V Datasheet PDF - Excelliance MOS

Part Number EMB60N06V
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 



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EMB60N06V datasheet, circuit
 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
60V 
D
RDSON (MAX.) 
60mΩ 
ID  8A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=6A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
EMB60N06V
LIMITS 
±20 
8 
6 
32 
6 
1.8 
0.9 
2.5 
1 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
2013/6/19 
TYPICAL 
 
 
MAXIMUM 
6 
50 
UNIT 
°C / W 
p.1 

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EMB60N06V equivalent
  EMB60N06V
 
 
 
10
Gate Charge Characteristics
  I D  = 6A
 8
 
6
 
VD S  = 15V 30V
 4
 
2
 
 0
03
6
9
12 15
18 21
  Q g  ‐ Gate Charge( nC )
  100
Maximum Safe Operating Area
 
  10 R D S  (O  N  ) Limit
 
100μs
1ms
10ms
100ms
 1
1s
  0.1
VG  S = 10V
Single Pulse
  R  J  A = 50°C/W
TA   = 25°C
 
0.01
10s
DC
  0.1
1 10
VD  S  ‐ DrainSource Voltage( V )
100
 
1000
900
800
700
600
500
400
300
200
100
0
0
50
40
Capacitance Characteristics
f  =  1MHz
V G S  = 0 V
Ciss
Coss
Crss
10 20 30 40
VD  S ‐ DrainSource Voltage( V )
50
Single Pulse Maximum Power Dissipation
Single Pulse
Rθ  J A = 50°C/W
TA  = 25°C
60
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
  Transient Thermal Response Curve
 1
Duty Cycle = 0.5
 
0.2
  0.1
0.1
  0.05
0.02
  0.01
0.01
Single Pulse
0.001
10 4
10 3
10 2
10 1
1
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.R θ J  A = 50°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
t 1 ,Time (sec)
2013/6/19 
p.5 

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