|
|
Número de pieza | EMB90N08V | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB90N08V (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
80V
D
RDSON (MAX.)
85mΩ
ID 5.2A
UIS, Rg 100% Tested
G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=6A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2013/7/24
EMB90N08V
LIMITS
±20
5.2
3.9
20
6
1.8
0.9
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
MAXIMUM
6
50
UNIT
°C / W
p.1
1 page EMB90N08V
Gate Charge Characteristics
10
I D = 5A
8
6 V D S = 20V 40V
4
2
0
02
4 6 8 10 12 14
Q g ‐ Gate Charge( nC )
1000
900
800
700
600
500
400
300
200
100
0
0
Ciss
Coss
Crss
10
Capacitance Characteristics
f = 1MHz
V G S = 0 V
20 30 40 50
VD S ‐ Drain‐Source Voltage( V )
60
M a xim u m Sa fe O p e ratin g A re a
100
1 0 R D S ( O N )Lim it
1
0.1
10uS
100uS
1mS
10mS
D
1
C
00
m
S
V G S = 1 0 V
Sin g le P u lse
R JA = 6 0 ° C / W
T A = 2 5 ° C
0.01
0 .1
1
10 100
V D S ‐ D r a i n ‐ S o u r c e V o l t a g e ( V )
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 60°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1
1
10 100 1000
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A = 60°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
10
100 1000
t 1 ,Time (sec)
2013/7/24
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB90N08V.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB90N08A | Field Effect Transistor | Excelliance MOS |
EMB90N08G | Field Effect Transistor | Excelliance MOS |
EMB90N08V | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |