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Número de pieza | EMF30N02H | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMF30N02H (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
20V
D
RDSON (MAX.)
30mΩ
ID 10A G
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 70 °C
Power Dissipation
TC = 25 °C
TC = 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
362°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/12/5
EMF30N02H
LIMITS
±12
10
7
40
25
16
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
5
62
UNIT
°C / W
p.1
1 page 5
ID = 5 A
G a te ‐C h a rg e C h a ra c te ristic s
4
3
2
VDS= 5V
10V
1
0
0
2 4 6 8 10
Q g, Gate Charge ( nC )
12
Maximum Safe Operating Area
100
RDS(ON) LIMIT
10
100μs
1ms
10ms
100ms
1s
1
DC
VGS =4.5V
0.1 SINGLE PULSE
RθJC=5°C/W
TC=25°C
0.01
0.1
1 10
VGS,Drain‐Source Voltage( V )
100
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
Notes:
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
1
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C = 5°C/W
3.TJ ‐ TC = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10 100
t 1 ,Time (mSEC)
2012/12/5
450
375
300
225
150
75
0
0
EMF30N02H
Capacitance Characteristics
f =1MHz
VGS=0 V
Ciss
Coss
Crss
5 10 15
VDS, Drain‐Source Voltage( V )
20
Single Pulse Maximum Power Dissipation
300 Single Pulse
Rθ J C = 5° C/W
TC = 25° C
250
200
150
100
50
0
0.01
0.1 1 10
Single Pulse Time( mSEC )
100
1000
1000
p.5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet EMF30N02H.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMF30N02A | Field Effect Transistor | Excelliance MOS |
EMF30N02H | Field Effect Transistor | Excelliance MOS |
EMF30N02J | Field Effect Transistor | Excelliance MOS |
EMF30N02JS | Field Effect Transistor | Excelliance MOS |
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