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EMB12N03H Datasheet PDF - Excelliance MOS

Part Number EMB12N03H
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 



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EMB12N03H datasheet, circuit
 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
D
RDSON (MAX.) 
11.5mΩ 
ID  25A  G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMB12N03H
LIMITS 
UNIT 
GateSource Voltage 
VGS  ±20 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
ID 
IDM 
25 
20 
100 
Avalanche Current 
IAS  30 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=30A, RG=25Ω 
L = 0.05mH 
EAS 
EAR 
45 
22.5 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
PD 
Tj, Tstg 
35 
14 
55 to 150 
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=15A, Rated VDS=25V NCH
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
MAXIMUM 
V 
A 
mJ 
W 
°C 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient3 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
362°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
3.5 
°C / W 
62 
2012/3/22 
p.1 

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EMB12N03H equivalent
 
 
1 2 G a te C h a rg e C h a ra c te ris tic s
  ID = 1 5 A
 
10 4
C a p a c ita n c e  C h a ra c te ris tic s
EMB12N03H
  10
 8
 
6
 
 4
V DS =5V
15V
10V
10 3
10 2
C iss
C o ss
C rss
 2
 
0
0
 
6 12
Q g ,G a te C h a rg e ( n C )
18
f =  1  M H z
V GS= 0  V
0 5 10 15 20
V DS ‐D ra in S o u rc e  V o lta g e ( V  )
25
30
 
 
300
MAXIMUM SAFE OPERATING AREA
200
   100 R d s (o  n ) Limit
50
  20
10μ  s
100μ  s
  10
1ms
 5
 2
 1
VG  S = 10V
RSIθ N J C G= L3E. 5P° UC/LWSE
Tc = 25° C
10ms
1D0C0ms
  0.5
0.5 1
 
10
VD S  ,DRAIN‐ SOURCE VOLTAGE( V )
100
 1
Transient Thermal Response Curve
Single Pulse Maximum Power Dissipation
1200
Single Pulse
Rθ  J C = 3.5° C/W
TC  = 25° C
1000
800
600
400
200
0
0.01
0.1 1
10
Single Pulse Time( mSEC ) 
100
1000
  Duty Cycle = 0.5
0.5
 
0.3
  0.2 0.2
  0.1 0.1
  0.05
0.05
 
0.02
  0.03
0.01
0.02
  Single Pulse
0.01
  102
101
 
1
t 1 ,Time (mSEC)
Notes:
DM
1.Duty Cycle,D =
t1
t2
2.Rθ  J C  = 3.5°C/W
3.TJ  ‐  T C  = P * Rθ  J C  (t)
4.Rθ  J C (t)=r(t) * RθJC
10 100
1000
 
 
 
 
2012/3/22 
p.5 

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Information Total 6 Pages
Download[ EMB12N03H.PDF Datasheet ]

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