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PDF EMB12N03HR Data sheet ( Hoja de datos )
| Número de pieza | EMB12N03HR | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
11.5mΩ
ID 25A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMB12N03HR
LIMITS
UNIT
Gate‐Source Voltage
VGS ±20
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
ID
IDM
25
20
100
Avalanche Current
IAS 30
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=30A, RG=25Ω
L = 0.05mH
EAS
EAR
45
22.5
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
PD
Tj, Tstg
35
14
‐55 to 150
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=15A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
V
A
mJ
W
°C
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
362°C / W when mounted on a 1 in2 pad of 2 oz copper.
3.5
°C / W
62
2013/8/28
p.1
1 page  
1 2 G a te C h a rg e C h a ra c te ris tic s
ID = 1 5 A
10 4
C a p a c ita n c e C h a ra c te ris tic s
EMB12N03HR
10
8
6
4
V DS =5V
15V
10V
10 3
10 2
C iss
C o ss
C rss
2
0
0
6 12
Q g ,G a te C h a rg e ( n C )
18
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
300
MAXIMUM SAFE OPERATING AREA
200
100 R d s (o n ) Limit
50
20
10μ s
100μ s
10
1ms
5
2
1
VG S = 10V
RSIθ N J C G= L3E. 5P° UC/LWSE
Tc = 25° C
10ms
1D0C0ms
0.5
0.5 1
10
VD S ,DRAIN‐ SOURCE VOLTAGE( V )
100
1
Transient Thermal Response Curve
Single Pulse Maximum Power Dissipation
1200
Single Pulse
Rθ J C = 3.5° C/W
TC = 25° C
1000
800
600
400
200
0
0.01
0.1 1
10
Single Pulse Time( mSEC )
100
1000
Duty Cycle = 0.5
0.5
0.3
0.2 0.2
0.1 0.1
0.05
0.05
0.02
0.03
0.01
0.02
Single Pulse
0.01
10‐2
10‐1
1
t 1 ,Time (mSEC)
Notes:
DM
1.Duty Cycle,D =
t1
t2
2.Rθ J C = 3.5°C/W
3.TJ ‐ T C = P * Rθ J C (t)
4.Rθ J C (t)=r(t) * RθJC
10 100
1000
2013/8/28
p.5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet EMB12N03HR.PDF ] | |
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