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EMB06N03HR Datasheet PDF - Excelliance MOS

Part Number EMB06N03HR
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 



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EMB06N03HR datasheet, circuit
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
30V 
D
RDSON (MAX.) 
6mΩ 
ID  75A 
 
UIS, Rg 100% Tested 
G
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
EMB06N03HR
LIMITS 
UNIT 
GateSource Voltage 
VGS  ±20 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
ID 
IDM 
75 
45 
160 
Avalanche Current 
IAS  53 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=53A, RG=25Ω
L = 0.05mH 
EAS 
EAR 
140 
40 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
PD 
Tj, Tstg 
50 
26 
55 to 150 
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=30V NCH
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
TYPICAL 
MAXIMUM 
V 
A 
mJ 
W 
°C 
UNIT 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
 
2.5 
°C / W 
50 
2012/3/26 
p.1 

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EMB06N03HR equivalent
  G A T E C H A R G E C H A R A C T E R IS T IC S
12
ID= 3 0 A
 
  10
 
8
 
VDS =5V
10V
 6
15V
EMB06N03HR
 
C a p a cita n ce  C h a ra cte ristics
10 4
10 3
C iss
Coss
 4
 
 2
 0
0 15 30 45
  Q g ,G A T E C H A R G E (n C )
10 2
C rss
f =  1  M H z
V GS= 0  V
0 5 10 15 20 25
V DS ‐D ra in S o u rce  V o lta g e ( V  )
30
 
 
 
 
 
 
 
 
 
 
300
200
100
R d s (o  n ) Limit
50
MAXIMUM SAFE OPERATING AREA
10μ  s
100μ  s
20 1ms
10 10ms
5 D1C00ms
2
1
0.5
0.5
VG  S = 10V
RSIθ N J C G= L2E. 5P° UC/LWSE
Tc = 25 °C
1 10
VD S  ,DRAIN‐ SOURCE VOLTAGE( V )
100
SINGLE PULSE MAXIMUM POWER DISSIPATION
3000
SRθI N JC  G= L2E. 5P° UC/LWSE
TC  = 25° C
2500
2000
1500
1000
500
0
0.01
0.1 1
10 100
SINGLE PULSE TIME ( mSEC ) 
1000
 
 
 1
D u ty  C y cle  =  0 .5
  0.5
Transient Therm al Response Curve
  0.3
  0.2 0.2
  0.1 0.1
  0.05
0.05
  0.02
0.03
  0.01
0.02
  0.01
Single Pulse
  102
1 01
 
Notes:
DM
1 10
t 1 ,Tim e ( m SEC  )
1 .D u ty  C y cle ,D  =
t1
t2
2 .Rθ  J C  =2 .5 °C /W
3 .TJ  ‐  TC   =  P *  R θ  J C  (t)
4 .Rθ  J C (t)= r(t) *  RθJC
100
1000
 
 
2012/3/26 
p.5 

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Information Total 6 Pages
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EMB06N03HThe function is N-Channel Logic Level Enhancement Mode Field Effect Transistor.Excelliance MOS
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EMB06N03HRThe function is Field Effect Transistor.Excelliance MOS
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