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What is EMB16N06H?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB16N06H Datasheet PDF - Excelliance MOS

Part Number EMB16N06H
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMB16N06H download ( pdf file ) link at the bottom of this page.





Total 6 Pages



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No Preview Available ! EMB16N06H datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
60V 
D
RDSON (MAX.) 
16mΩ 
ID  42A  G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TC = 25 °C 
TC = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=20A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2014/3/21 
EMB16N06H
LIMITS 
±20 
42 
26 
100 
20 
20 
10 
50 
20 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
2.5 
62 
UNIT 
°C / W 
p.1 

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EMB16N06H equivalent
 
  Gate Charge Characteristics
  10
I D  = 20A
 8
  VD  S   = 15V 30V
 6
 4
 
 2
 0
0
 
15 30
Q g  ‐ Gate Charge( nC )
45
60
  EMB16N06H
4000
3000
2000
Ciss
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
1000
0
0
Coss
Crss
10 20 30
VD  S ‐ DrainSource Voltage( V )
40
 
  103
Maximum Safe Operating Area
 
  102 RDS(ON) Limited
10μs
Single Pulse Maximum Power Dissipation
1200
1000
Single Pulse
Rθ  J C = 3.5° C/W
TC  = 25° C
800
  101
 
100μs
1ms
10ms
DC
  100
  TC=25°C
    RθJC=3.5°C/W
  Vgs=10V
  Single Pulse
  101
100
VDS, Dra1in01Source Voltage( V ) 102
 
600
400
200
0
0.01
0.1 1 10
Single Pulse Time( mSEC ) 
100
1000
 
1
Transient Thermal Response Curve
  Duty Cycle = 0.5
  0.5
  0.3
0.2 0.2
 
  0.1 0.1
0.05
  0.05
Notes:
  0.02
0.03
0.01
  0.02
Single Pulse
  0.01
102
101
1
DM
1.Duty Cycle,D =
t1
t2
2.Rθ  J C  = 3.5°C/W
3.TJ  ‐  T C  = P * Rθ  J C  (t)
4.Rθ  J C (t)=r(t) * RθJC
10 100
  t 1 ,Time (mSEC)
1000
 
 
 
 
 
2014/3/21 
p.5 


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for EMB16N06H electronic component.


Information Total 6 Pages
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Featured Datasheets

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EMB16N06AThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMB16N06CSThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMB16N06GThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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