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Número de pieza | EMB06N03G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMB06N03G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
6mΩ
ID 18A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=20A, RG=25Ω
L = 0.05mH
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB06N03G
LIMITS
±20
18
12
72
20
20
10
2.5
1
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/3/12
TYPICAL
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page EMB06N03G
G a te C h a rg e C h a ra c te ris tic s
1 2 ID = 1 8 A
10 4
C a p a c ita n c e C h a ra c te ris tic s
10
8
6
4
2
0
0
V DS =5V
15V
10V
15 30
Q g ,G a te C h a rg e ( n C )
45
10 3
10 2
C is s
Co ss
C rss
f = 1 M H z
V GS= 0 V
0 5 10 15 20 25
V DS ‐D ra in ‐S o u rc e V o lta g e ( V )
30
100
Maximum Safe Operating Area
R D S (O N ) Limit
10
100μs
1ms
10ms
100ms
1
1s
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
10s
0.1
VG S = 10V
Single Pulse
R J A = 50°C/W
TA = 25°C
DC
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
1
Transient Thermal Response Curve
Duty Cycle = 0.5
20
10
0
0.001
0.01 0.1
1
10 100 1000
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.R θ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
t 1 ,Time (sec)
2012/3/12
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMB06N03G.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMB06N03A | Field Effect Transistor | Excelliance MOS |
EMB06N03E | Field Effect Transistor | Excelliance MOS |
EMB06N03G | Field Effect Transistor | Excelliance MOS |
EMB06N03GH | Field Effect Transistor | Excelliance MOS |
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