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What is EMB60N10G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMB60N10G Datasheet PDF - Excelliance MOS

Part Number EMB60N10G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


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Total 5 Pages



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No Preview Available ! EMB60N10G datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
100V 
D
RDSON (MAX.) 
60mΩ 
ID  6A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=10A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TC = 25 °C 
TC = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
 
 
 
 
2013/11/26 
EMB60N10G
LIMITS 
±20 
6 
4 
24 
10 
5 
2.5 
2.5 
1 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
25 
50 
UNIT 
°C / W 
p.1 

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EMB60N10G equivalent
 
 
 
Gate Charge Characteristics
  10
I D  = 6A
 8
 
 6
VD  S   = 25V
50V
 4
 
 2
 0
0
 
10 20 30
Q g  ‐ Gate Charge( nC )
40
 
  100
Maximum Safe Operating Area
   10 R D  S (O  N )Limit
 1
 
  0.1
100μs
1ms
10ms
100ms
1s
DC
    VG  S = 10V
  Single Pulse
  R  JA = 125°C/W
  0.01   TA   = 25°C
0.1
1
10 100
VD S   ‐ DrainSource Voltage( V )
 
1000
 1
Transient Thermal Response Curve
  Duty Cycle = 0.5
  0.2
0.1
  0.1
0.05
 
0.02
  0.01
0.01
  Single Pulse
 
  0.001
10 4
 
10 3
10 2
10 1
t 1 ,Time (sec)
1
 
 
 
 
 
2013/11/26 
  EMB60N10G
1600
1200
Ciss
Capacitance Characteristics
f  =  1MHz
VG  S  = 0 V
800
400
Coss
Crss
0
0 25 50 75
VD  S ‐ DrainSource Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 125°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J  A =125°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
p.5 


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Part Details

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Information Total 5 Pages
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Featured Datasheets

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