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What is EMBA0N10G?

This electronic component, produced by the manufacturer "Excelliance MOS", performs the same function as "Field Effect Transistor".


EMBA0N10G Datasheet PDF - Excelliance MOS

Part Number EMBA0N10G
Description Field Effect Transistor
Manufacturers Excelliance MOS 
Logo Excelliance MOS Logo 


There is a preview and EMBA0N10G download ( pdf file ) link at the bottom of this page.





Total 5 Pages



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No Preview Available ! EMBA0N10G datasheet, circuit

 
 
NChannel Logic Level Enhancement Mode Field Effect Transistor 
Product Summary: 
BVDSS 
100V 
D
RDSON (MAX.) 
100mΩ 
ID  5A 
G
 
UIS, Rg 100% Tested 
S
PbFree Lead Plating & Halogen Free 
 
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 
PARAMETERS/TEST CONDITIONS 
SYMBOL 
GateSource Voltage 
Continuous Drain Current 
Pulsed Drain Current1 
TA = 25 °C 
TA = 100 °C 
Avalanche Current 
Avalanche Energy 
Repetitive Avalanche Energy2 
L = 0.1mH, ID=5A, RG=25Ω 
L = 0.05mH 
Power Dissipation 
TA = 25 °C 
TA = 100 °C 
Operating Junction & Storage Temperature Range 
 
THERMAL RESISTANCE RATINGS 
THERMAL RESISTANCE 
SYMBOL 
VGS 
ID 
IDM 
IAS 
EAS 
EAR 
PD 
Tj, Tstg 
TYPICAL 
JunctiontoCase 
RJC 
JunctiontoAmbient 
RJA 
1Pulse width limited by maximum junction temperature. 
2Duty cycle  1 
350°C / W when mounted on a 1 in2 pad of 2 oz copper. 
 
 
 
2013/10/9 
EMBA0N10G
LIMITS 
±20 
5 
3.3 
20 
5 
1.25 
0.625 
2.5 
1 
55 to 150 
UNIT 
V 
A 
mJ 
W 
°C 
MAXIMUM 
25 
50 
UNIT 
°C / W 
p.1 

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EMBA0N10G equivalent
 
 
  10
Gate Charge Characteristics
I D  = 5A
 
8
 
 6
 
4
 
VD  S   = 50V
80V
 2
 
0
 0
 
10 20 30
Q g  ‐ Gate Charge( nC )
40
 
100
 
M axim um  Safe O perating A rea
   10 R  D S  (O  N  )Limit
 1
 
10uS
100uS
1mS
DC100m10SmS
  0.1
VG  S = 10V
  Single Pulse
R  JA = 125°C/W
TA   = 25°C
  0.010.1 1 10 100 1000
VD  S  ‐ DrainSource Voltage( V )
 
 1
Transient Thermal Response Curve
  Duty Cycle = 0.5
  0.2
0.1
  0.1
0.05
 
0.02
  0.01
0.01
  Single Pulse
 
  0.001
10 4
 
10 3
10 2
10 1
t 1 ,Time (sec)
1
 
 
 
 
 
2013/10/9 
  EMBA0N10G
2000
1800
1600
Ciss
1400
Capacitance Characteristics
f  =  1M Hz
V  G S  =  0  V
1200
1000
800
600
400
Coss
200
0 Crss
0 20 40 60 80
VD  S ‐ D rainSource Voltage( V  )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ  J A = 125°C/W
40 TA  = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ  J  A =125°C/W
3.TJ  ‐  TA   = P * Rθ  J A  (t)
4.Rθ  J A (t)=r(t) + RθJA
10 100
1000
p.5 


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Part Details

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Information Total 5 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
EMBA0N10AThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMBA0N10CSThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS
EMBA0N10FThe function is Field Effect Transistor. Excelliance MOSExcelliance MOS

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