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Número de pieza | EMDE0N20G | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMDE0N20G (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
0.5Ω
ID 1.6A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TA = 25 °C
TA = 100 °C
Power Dissipation
TA = 25 °C
TA = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient3
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
350°C / W when mounted on a 1 in2 pad of 2 oz copper.
2012/2/2
EMDE0N20G
LIMITS
±30
1.6
1
6.4
2.5
1
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
25
50
UNIT
°C / W
p.1
1 page EMDE0N20G
10
Gate Charge Characteristics
I D = 0.8A
8
6
4
VD S = 50V
100V
2
0
05
10 15 20 25
Q g ‐ Gate Charge( nC )
1200
900
Ciss
600
Capacitance Characteristics
f = 1MHz
VG S = 0 V
300
Coss
Crss
0
0
50 100 150
VD S ‐ Drain‐Source Voltage( V )
200
10
Maximum Safe Operating Area
R D S ( O N )Limit
100μs
1ms
1
10ms
0.1
100ms
1s
DC
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 50°C/W
40 TA = 25°C
30
20
VG S = 10V
Single Pulse
R JA = 50°C/W
0.01 TA = 25°C
1 10 100 1000
VD S ‐ Drain‐Source Voltage( V )
1
Transient Thermal Response Curve
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D = t2 t1
t2
2.R θ J A = 50°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2012/2/2
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMDE0N20G.PDF ] |
Número de pieza | Descripción | Fabricantes |
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EMDE0N20C | Field Effect Transistor | Excelliance MOS |
EMDE0N20CS | Field Effect Transistor | Excelliance MOS |
EMDE0N20E | Field Effect Transistor | Excelliance MOS |
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