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PDF EMB20N03Q Data sheet ( Hoja de datos )
| Número de pieza | EMB20N03Q | |
| Descripción | Field Effect Transistor | |
| Fabricantes | Excelliance MOS | |
| Logotipo |  |
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N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
D
RDSON (MAX.)
22mΩ
ID 6A
G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy2
L = 0.1mH, ID=6A, RG=25Ω
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
EMB20N03Q
LIMITS
±20
6
4
24
6
1.8
0.9
6.25
2.5
‐55 to 150
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1％
2013/8/15
TYPICAL
MAXIMUM
20
100
UNIT
°C / W
p.1
1 page  
10
I D = 6A
8
6
Gate Charge Characteristics
VD S = 5V
10V
15V
4
2
0
0
4 8 12
Q g ‐ Gate Charge( nC )
16
EMB20N03Q
1000
900
800
700
600
500
400
300
200
100
0
0
Capacitance Characteristics
f = 1MHz
V G S = 0 V
Ciss
Coss
Crss
5 10 15 20 25
VD S ‐ Drain‐Source Voltage( V )
30
Maximum Safe Operating Area
100
10 R D S ( O N ) Limit
100μs
1ms
10ms
1
100ms
1s
0.1
VG S = 10V
Single Pulse
R J A = 100°C/W
TA = 25°C
10s
DC
0.01
0.1
1 10
VD S ‐ Drain‐Source Voltage( V )
100
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 100°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Duty Cycle = 0.5
Transient Thermal Response Curve
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.R θ J A = 100°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) * RθJA
10 100
1000
2013/8/15
p.5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet EMB20N03Q.PDF ] | |
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