|
|
Número de pieza | EMBJ0N20Q | |
Descripción | Field Effect Transistor | |
Fabricantes | Excelliance MOS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EMBJ0N20Q (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
200V
D
RDSON (MAX.)
1Ω
ID 1.1A G
UIS, 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
VGS
ID
IDM
PD
Tj, Tstg
TYPICAL
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
2012/8/15
EMBJ0N20Q
LIMITS
±20
1.1
0.7
4.4
6.25
2.5
‐55 to 150
UNIT
V
A
W
°C
MAXIMUM
20
150
UNIT
°C / W
p.1
1 page EMBJ0N20Q
Gate Charge Characteristics
10
I D = 0.55A
8
6
V D S = 50V 100V
800
Ciss
600
Capacitance Characteristics
f = 1MHz
VG S = 0 V
400
4
2
0
0 5 10 15 20 25
Q g ‐ Gate Charge( nC )
10
Maximum Safe Operating Area
R D S (O N )Limit
100μs
1ms
1
10ms
100ms
1s
0.1
DC
200
Coss
0 Crss
0
50 100 150
VD S ‐ Drain‐Source Voltage( V )
200
Single Pulse Maximum Power Dissipation
50
Single Pulse
Rθ J A = 150°C/W
TA = 25°C
40
30
20
VG S = 10V
Single Pulse
R JA = 150°C/W
0.01 TA = 25°C
1 10 100 1000
VD S ‐ Drain‐Source Voltage( V )
10
0
0.001
0.01 0.1 1 10
t 1 ,Time ( sec )
100 1000
1
Transient Thermal Response Curve
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
Single Pulse
0.001
10 ‐4
10 ‐3
10 ‐2
10 ‐1
1
t 1 ,Time (sec)
Notes:
P DM
t1
1.Duty Cycle,D =t2 t1
t2
2.Rθ J A = 150°C/W
3.TJ ‐ TA = P * Rθ J A (t)
4.Rθ J A (t)=r(t) + RθJA
10 100
1000
2012/8/15
p.5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet EMBJ0N20Q.PDF ] |
Número de pieza | Descripción | Fabricantes |
EMBJ0N20A | Field Effect Transistor | Excelliance MOS |
EMBJ0N20CS | Field Effect Transistor | Excelliance MOS |
EMBJ0N20G | Field Effect Transistor | Excelliance MOS |
EMBJ0N20Q | Field Effect Transistor | Excelliance MOS |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |