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M5M29FT800VP-12 Datasheet PDF - Mitsubishi

Part Number M5M29FT800VP-12
Description 8M-Bit BLOCK ERASE FLASH MEMORY
Manufacturers Mitsubishi 
Logo Mitsubishi Logo 

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M5M29FT800VP-12 datasheet, circuit
MITMSIUTSBUISBHISI HLISILsSIs
M5M29FBM/T58M0290FFBP/T,8V00PF,PR,VVP-,8R0V-,8-01,0-1,0-,1-122
8,388,388,680,680-B8-IBT I(T10(14084,587,567-W6-OWRODRDBYB8Y-B8-IBT I/T5/2542,248,288-W8-OWRODRDBYB1Y61-B6-IBT)IT)
CMCOMSO3S.33V.3-OVN-OLNYL, YB, LBOLCOKCEKREARSAESFELFALSAHSMHEMMEOMROYRY
DESCRIPTION
The MITSUBISHI M5M29FB/T800FP, VP, RV are 3.3V-only high speed 8,388,608-bit CMOS boot block Flash Memories suitable for
mobile and personal computing, and communication products. The M5M29FB/T800FP, VP, RV are fabricated by CMOS technology for
the peripheral circuits and DINOR(Divided bit line NOR) architecture for the memory cells, and are available in 44pin SOP or 48pin
TSOP(I).
FEATURES
Organization
................................. 524,288 word x 16bit
................................. 1,048,576 word x 8 bit
Supply voltage ............................................................. VCC = 3.3V±0.3V
Access time
.............................. 80/100/120ns (Max)
PIN CONFIGURATION (TOP VIEW)
Power Dissipation
Read
....................... 108 mW (Max.)
Program/Erase
....................... 144 mW (Max.)
Standby
....................... 0.72 mW (Max.)
Deep power down mode ....................... 3.3µW (typ.)
Auto program
Program Time
....................... 7.5ms (typ.)
Program Unit ................................. 128word
Auto Erase
Erase time
................................. 50 ms (typ.)
Erase Unit
Boot Block ................................. 8Kword / 16Kbyte x 1
Parameter Block ........................ 4Kword / 8Kbyte x 2
Main Block
.......................16Kword / 32Kbyte x 1
........................... 32Kword / 64Kbyte x 15
Program/Erase cycles ....................................... 100Kcycles
NC
A18
A17
A7
A6
ADDRESS
INPUTS
A5
A4
A3
A2
A1
CHIP ENABLE
INPUT
A0
/CE
GND
OUTPUT ENABLE
INPUT
/OE
DQ0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
RESET/
44
/RP
POWER DOWN
INPUT
43 /WE WRITE ENABLE
INPUT
42 A8
41 A9
40 A10
39 A11
ADDRESS
38 A12 INPUTS
37 A13
36 A14
35 A15
34 A16
33
/BYTE
BYTE ENABLE
INPUT
32 GND
31 DQ15/A-1
30 DQ7
Boot Block
M5M29FB800
M5M29FT800
Other Functions
........................... Bottom Boot
........................... Top Boot
DATA
INPUTS/
OUTPUTS
DQ8
DQ1
DQ9
DQ2
16
17
18
19
29 DQ14
28 DQ6
27 DQ13
26 DQ5
DATA
INPUTS/
OUTPUTS
Software Command Control
DQ10 20
25 DQ12
Selective Block Lock
Erase Suspend/Resume
Program Suspend/Resume
DQ3
DQ11
21
22
24 DQ4
23 VCC
Status Register Read
Sleep
Package
Outline 600mil 44-pin SOP
(FP: 44P2A-A)
48-Lead, 12mmx 20mm TSOP (type-I)
44-Lead SOP
APPLICATION
Code Storage PC BIOS
Digital Cellular Phone/Telecommunication
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
/WE
/RP
NC
/WP
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
M5M29FB/T800VP
48 A16
47 /BYTE
A16
/BYTE
1
2
46 GND
GND
3
45 DQ15/A-1 DQ15/A-1
4
44 DQ7
43 DQ14
DQ7
DQ14
5
6
42 DQ6
DQ6
7
41 DQ13
40 DQ5
DQ13
DQ5
8
9
39 DQ12
DQ12
10
38 DQ4
37 VCC
36 DQ11
35 DQ3
DQ4
VCC
DQ11
DQ3
11
12
13
14
34 DQ10
33 DQ2
DQ10
DQ2
15
16
32 DQ9
31 DQ1
30 DQ8
DQ9
DQ1
DQ8
17
18
19
29 DQ0
28 /OE
DQ0
/OE
20
21
27 GND
26 /CE
GND
/CE
22
23
25 A0
A0 24
M5M29FB/T800RV
48 A15
47 A14
46 A13
45 A12
44 A11
43 A10
42 A9
41 A8
40 NC
39 NC
38 /WE
37 /RP
36 NC
35 /WP
34 RY/BY
33 A18
32 A17
31 A7
30 A6
29 A5
28 A4
27 A3
26 A2
25 A1
Outline 48pin TSOP type-I (12 X 20mm)
VP(Normal bend): 48P3R-B
RV(Reverse bend): 48P3R-C
NC : NO CONNECTION
This product is compatible with HN29WB/T800 by Hitachi Ltd.
1 May 1997 , Rev.6.1

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M5M29FT800VP-12 equivalent
MITSUBISHI LSIs
M5M29FB/T800FP,VP,RV-80,-10,-12
8,388,608-BIT (1048,576-WORD BY 8-BIT / 524,288-WORD BY16-BIT)
CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
SOFTWARE COMMAND DEFINITION
Command List
1st bus cycle
2nd bus cycle
3rd bus cycle
Command
Mode Address Data
(D7-0)
Mode
Address
Data
(D7-0)
Mode
Address
Data
(D7-0)
Read Array
Device Identifier
Read Status Register
Clear Status Register
Page Program 4)
Block Erase / Confirm
Suspend
Resume
Read Lock Bit Status
Lock Bit Program / Confirm
Erase All Unlocked Blocks
Sleep 7)
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
X FFH
X
90H Read
IA 2)
ID 2)
X 70H Read
X SRD3)
X 50H
X
41H Write
WA0 4) WD0 4) Write
WA1
WD1
X
20H Write
BA 5)
D0H
X B0H
X D0H
X
71H Read
BA
DQ6 6)
X
77H Write
BA
D0H
X A7H Write X D0H
X F0H
1) In the word-wide mode, upper byte data (D8-D15) is ignored.
2) IA=ID Code Address : A0=VIL (Manufacturer's Code) : A0=VIH (Device Code), ID=ID Code,
/BYTE =VIL : A-1, A1-A18 = VIL, /BYTE =VIH : A1-A18 = VIL
3) SRD = Status Register Data
4) WA=Write Address, WD=Write Data.
/BYTE =VIL : Write Address and Write Data must be provided sequentially from 00H to FFH for A-1-A6.
Page size is 256Byte (256byte x 8bit), /BYTE =VIH : Write Address and Write Data must be provided
sequentially from 00H to 7FH for A0-A6. Page size is 128word (128word x 16bit).
5) BA = Block Address ( Addresses except Block Address mest be VIH.)
6) DQ6 provides Block Lock Status, DQ6 = 1 : Block Unlock, DQ6 = 0 : Block Locked.
7) Sleep command (F0H) put the device into the sleep mode after completing the current operation. The active current is reduced to deep power -down levels.
The Read Array command (FFH) must be written to get the device out of sleep mode.
BLOCK LOCKING
SOP Package
/RP Lock Bit(Internally)
/RP
TSOP Package
/WP Lock Bit(Internally)
Write Protection Provided
VIL X
VIL X
X
All Blocks Locked (Deep Power Down Mode)
VHH
X
VHH
X
X
All Blocks UnLocked
VIH 0
VIH 1
VIH VIL
VIH VIL
0
1
Blocks Locked (Depend on Lock Bit Data)
Blocks Unlocked (Depend on Lock Bit Data)
VIH VIH
X
All Blocks Unlocked
D6 provides Lock Status of each block after writing the Read Lock Status command (71H).
In case of TSOP package, /WP pin must not be switched during performing Read / Write operations or WSM Busy (WSMS = 0).
STATUS REGISTER
Symbol
SR.7
SR.6
SR.5
SR.4
SR.3
SR.2
SR.1
SR.0
(D7)
(D6)
(D5)
(D4)
(D3)
(D2)
(D1)
(D0)
Status
Write State Machine Status
Suspend Status
Erase Status
Program Status
Block Status after Program
Reserved
Reserved
Device Sleep Status
"1"
Ready
Suspended
Error
Error
Error
-
-
Device in Sleep
Definition
"0"
Busy
Operation in Progress / Completed
Successful
Successful
Successful
-
-
Device Not in Sleep
*The RY/BY is an open drain output pin and indicates status of the internal WSM. When low,it indicates that the WSM is Busy performing an operation.
A pull-up resistor of 10K-100K Ohms is required to allow the RY/BY signal to transition high indicating a Ready WSM condition.
*D3 indicates the block status after the page programming. When D3 is "1", the page has the over-programed cell . If over-program occures, the device is block
fail. However if D3 is "1", please try the block erase to the block. The block may revive.
DEVICE IDENTIFIER CODE
Code
Pins
A0
D7 D6 D5 D4 D3 D2 D1 D0 Hex. Data
Manufacturer Code
VIL
0 00111 00
1CH
Device Code (-T)
VIH
010
1 1 10
1
5DH
Device Code (-B)
VIH
010 11 110
5EH
In the word-wide mode, the same data as D7-0 is read out from D15-8.
A9 = VHH Mode : A9 = 11.5V~13.0V Set A9 to VHH min.200ns before falling edge of /CE in ready status. Min.200ns after return to VIH ,device can't be accessed.
A1~A8, A10~A18, /CE,/OE = VIL, /WE = VIH
D15/A-1 = VIL (/BYTE = L)
5 May 1997 , Rev.6.1

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Information Total 14 Pages
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