|
|
PDF SVD640F Data sheet ( Hoja de datos )
| Número de pieza | SVD640F | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silan Microelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SVD640F (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
SVD640T/D/F_Datasheet
18A, 200V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD640T/D/F is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary S-RinTM
structure middle/low-voltage VDMOS technology. The improved planar
stripe cell and the improved guard ring terminal have been especially
tailored to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche and
commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
18A,200V,RDS(on)(typ.)=0.12Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
ORDERING INFORMATION
Part No.
Package
SVD640T
SVD640D
SVD640DTR
SVD640F
TO-220-3L
TO-252-2L
TO-252-2L
TO-220F-3L
Marking
SVD640T
SVD640D
SVD640D
SVD640F
Material
Pb free
Halogen free
Halogen free
Pb free
Packing
Tube
Tube
Tape & Reel
Tube
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Characteristics
Symbol
SVD640T
Ratings
SVD640D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
TC=25°C
TC=100°C
Drain Pulsed Current
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
200
±20
18
11
72
150 110
1.2 0.88
635
150
-65～+150
SVD640F
35
0.28
Unit
V
V
A
A
W
W/°C
MJ
°C
°C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 1 of 8
1 page  
Silan
Microelectronics
TYPICAL TEST CIRCUIT
SVD640T/D/F_Datasheet
Gate Charge Test Circuit & Waveform
Same Type
VGS
50KΩ
as DUT
10V
VDS
12V 200nF
300nF
Qg
Qgs Qgd
VGS
DUT
3mA
Charge
10V
VDS
VGS
RG
Resistive Switching Test Circuit & Waveform
RL
DUT
VDD
VDS
90%
10%
VGS
td(on)
tr
ton
td(off)
tf
toff
RG
10V
tp
Unclamped Inductive Switching Test Circuit & Waveform
VDS
ID
L
BVDSS
IAS
EAS =
1
2
LIAS2
BVDSS
BVDSS - VDD
DUT
VDD
VDD
ID(t)
tp
VDS(t)
Time
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.1
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SVD640F.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SVD640D | MOSFET ( Transistor ) | Silan Microelectronics |
| SVD640F | MOSFET ( Transistor ) | Silan Microelectronics |
| SVD640T | MOSFET ( Transistor ) | Silan Microelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |