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PDF SW10N65K Data sheet ( Hoja de datos )
| Número de pieza | SW10N65K | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW10N65K
N-channel TO-220F/TO251N /TO-220 MOSFET
Features
■ High ruggedness
■ RDS(ON) (Max 0.4Ω)@VGS=10V
■ Gate Charge (Typical 29nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
TO-220F
TO-251N TO-220
1
2
3
1
2
3
1
2
3
General Description
1. Gate 2. Drain 3. Source
This power MOSFET is produced with advanced super-junction technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, excellent avalanche characteristics, low gate charge and especially in
low on resistance. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
Order Codes
BVDSS : 650V
ID : 10A
RDS(ON) : 0.4Ω
2
1
3
Item Sales Type
1 SW F 10N65
2 SW I 10N65
3 SW P 10N65
Marking
SW10N65K
SW10N65K
SW10N65K
Package
TO-220F
TO251N
TO-220
Packaging
TUBE
TUBE
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
(note 1)
Gate to Source Voltage
Single pulsed Avalanche Energy
(note 2)
Repetitive Avalanche Energy
(note 1)
Peak diode Recovery dv/dt
(note 3)
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
TO220F
Value
TO251N
650
10*
6.3*
40
± 30
270
60
5
25.5 96.2
0.2 0.77
-55 ~ + 150
300
TO-220
178.6
1.43
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
TO220F
4.9
48.7
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Value
TO251N
1.3
TO-220
0.70
80.0 53.7
Oct. 2014. Rev.3.0
Unit
oC/W
oC/W
oC/W
1/6
1 page  
SAMWIN
Fig. 13. Capacitance Characteristics
SW10N65K
Fig. 14. Gate charge test circuit & waveform
Same type
as DUT
3mA
VGS
VGS
VDS
DUT
10V
QGS
QG
QGD
Charge
Fig. 15. Switching time test circuit & waveform
nC
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2014. Rev.3.0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SW10N65K.PDF ] | |
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