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PDF SW4N60D Data sheet ( Hoja de datos )
| Número de pieza | SW4N60D | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | SEMIPOWER | |
| Logotipo |  |
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SAMWIN
SW4N60D
N-channel TO-220F/I-PAKN/D-PAK MOSFET
Features
TO-220F TO-251N TO-252
■ High ruggedness
■ RDS(ON) (Max 2.2Ω)@VGS=10V
■ Gate Charge (Typ 18nC)
■ Improved dv/dt Capability
■ 100% Avalanche Tested
123
12
3
12
3
1. Gate 2. Drain 3. Source
General Description
This power MOSFET is produced with advanced VDMOS technology of SAMWIN.
This technology enable power MOSFET to have better characteristics, such as fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics. This power MOSFET is usually used at high efficient DC to DC converter
block and switch mode power supply.
BVDSS : 600V
ID : 4A
RDS(ON) : 2.2Ω
2
1
3
Order Codes
Item
1
2
3
Sales Type
SW F 4N60
SW I 4N60
SW D 4N60
Marking
SW4N60D
SW4N60D
SW4N60D
Package
TO-220F
TO-251N
TO-252
Packaging
TUBE
TUBE
REEL
Absolute maximum ratings
Symbol
Parameter
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
Drain to Source Voltage
Continuous Drain Current (@TC=25oC)
Continuous Drain Current (@TC=100oC)
Drain current pulsed
Gate to Source Voltage
Single pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak diode Recovery dv/dt
(note 1)
(note 2)
(note 1)
(note 3)
PD
Total power dissipation (@TC=25oC)
Derating Factor above 25oC
TSTG, TJ
TL
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering
purpose, 1/8 from Case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Value
TO-220F TO-251N TO-252
600
4*
2.5*
16
± 30
184
55
5
23.5 152.6 141.0
0.19 1.22 1.13
-55 ~ + 150
300
Unit
V
A
A
A
V
mJ
mJ
V/ns
W
W/oC
oC
oC
Symbol
Rthjc
Rthcs
Rthja
Parameter
Thermal resistance, Junction to case
Thermal resistance, Case to Sink
Thermal resistance, Junction to ambient
Value
TO-220F TO-251N
5.31 0.82
TO-252
0.89
47.1 83.5 79.0
Unit
oC/W
oC/W
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 2.0
1/6
1 page  
SAMWIN
Fig. 13. Capacitance Characteristics
SW4N60D
Fig. 14. Gate charge test circuit & waveform
Same type
as DUT
1mA
VGS
VGS
VDS
DUT
10V
QGS
QG
QGD
Charge
Fig. 15. Switching time test circuit & waveform
nC
RGS
10VIN
RL
VDS
DUT
VDD
VDS 90%
VIN 10%
td(on)
10%
tr
tON
td(off)
tf
tOFF
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
May. 2014. Rev. 2.0
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SW4N60D.PDF ] | |
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