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PDF GS66506T Data sheet ( Hoja de datos )

Número de pieza GS66506T
Descripción Top cooled 650V enhancement mode GaN transistor
Fabricantes GaN Systems 
Logotipo GaN Systems Logotipo



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GS66506T
Top cooled 650V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Features
650V enhancement mode power switch
Top cooled configuration
Ultra low FOM Island Technologydie
Low inductance GaNPXpackage
Reverse current capability
Integral source sense
Dual gate pads for optimal board layout
Zero reverse recovery loss
RoHS 6 compliant
Applications
On-board battery chargers
400V DC-DC conversion
Inverters, UPS, and VFD motor drive
AC-DC power supplies (PFC & primary)
VHF small form factor power adapters
High frequency, high efficiency power
conversion
top view
D
TP
GG
S
TP = thermal pad - internally connected to
the source (S) and to the substrate.
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Tcase=25°C)
Continuous Drain Current (Tcase=100°C)
Pulsed Drain Current (Tcase=25°C)
Symbol
TJ
TS
VDS
VGS
IDS(cont)25
IDS(cont)100
ID‚pulse
Value
-55 to +150
-55 to +150
650
±10
22
17
45
Units
°C
°C
V
V
A
A
A
Thermal Characteristics (Typical values unless otherwise noted)
Parameters
Symbol
Value
Units
Thermal Resistance (junction to case)
RΘJC 0.67 °C /W
Maximum Soldering Temperature (MSL3 rated)
TSOLD
260
°C
(2) Device mounted on 40mm x 40mm x 1.5mm single layer epoxy PCB FR4 with 6cm2 copper area (thickness 70μm) for thermal pad
connection. PCB is vertical without air stream cooling.
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
1
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.

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