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Número de pieza | GS66506T | |
Descripción | Top cooled 650V enhancement mode GaN transistor | |
Fabricantes | GaN Systems | |
Logotipo | ||
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No Preview Available ! GS66506T
Top cooled 650V enhancement mode GaN transistor
PRELIMINARY DATASHEET
Features
– 650V enhancement mode power switch
– Top cooled configuration
– Ultra low FOM Island Technology™ die
– Low inductance GaNPX™ package
– Reverse current capability
– Integral source sense
– Dual gate pads for optimal board layout
– Zero reverse recovery loss
– RoHS 6 compliant
Applications
– On-board battery chargers
– 400V DC-DC conversion
– Inverters, UPS, and VFD motor drive
– AC-DC power supplies (PFC & primary)
– VHF small form factor power adapters
– High frequency, high efficiency power
conversion
top view
D
TP
GG
S
TP = thermal pad - internally connected to
the source (S) and to the substrate.
Absolute Maximum Ratings (Tcase = 25˚C except as noted)
Parameters
Operating Junction Temperature
Storage Temperature Range
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Tcase=25°C)
Continuous Drain Current (Tcase=100°C)
Pulsed Drain Current (Tcase=25°C)
Symbol
TJ
TS
VDS
VGS
IDS(cont)25
IDS(cont)100
ID‚pulse
Value
-55 to +150
-55 to +150
650
±10
22
17
45
Units
°C
°C
V
V
A
A
A
Thermal Characteristics (Typical values unless otherwise noted)
Parameters
Symbol
Value
Units
Thermal Resistance (junction to case)
RΘJC 0.67 °C /W
Maximum Soldering Temperature (MSL3 rated)
TSOLD
260
°C
(2) Device mounted on 40mm x 40mm x 1.5mm single layer epoxy PCB FR4 with 6cm2 copper area (thickness 70μm) for thermal pad
connection. PCB is vertical without air stream cooling.
Preliminary – Rev 150406
© 2009-2015 GaN Systems Inc.
1
This information pertains to a product under development. Its characteristics and specifications are subject to change without notice.
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Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet GS66506T.PDF ] |
Número de pieza | Descripción | Fabricantes |
GS66506T | Top cooled 650V enhancement mode GaN transistor | GaN Systems |
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