GA08JT17-247 Datasheet PDF - GeneSiC
Part Number | GA08JT17-247 | |
Description | Junction Transistor | |
Manufacturers | GeneSiC | |
Logo | ||
There is a preview and GA08JT17-247 download ( pdf file ) link at the bottom of this page. Total 11 Pages |
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Normally – OFF Silicon Carbide
Junction Transistor
Features
175 °C Maximum Operating Temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Package
RoHS Compliant
D
VDS
RDS(ON)
ID @ Tc=125°C
hFE Tc=25°C
=
=
=
=
1700 V
230 mΩ
8A
60
D
S
D
G
TO-247AB
G
S
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Applications
Down Hole Oil Drilling, Geothermal Instrumentation
Hybrid Electric Vehicles (HEV)
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Induction Heating
Uninterruptible Power Supply (UPS)
Motor Drives
Conditions
VGS = 0 V
TC = 125 °C
TVJ = 175 oC, IG = 1 A,
Clamped Inductive Load
TVJ = 175 oC, IG = 1 A, VDS = 1200 V,
Non Repetitive
TC = 125 °C
Value
1700
8
1.5
ID,max = 8
@ VDS ≤ VDSmax
20
30
50
48
-55 to 175
Unit
V
A
A
A
Notes
Fig. 6
Fig. 19
Fig. 16
µs
V
V
W Fig. 14
°C
Electrical Characteristics
Parameter
On State Characteristics
Drain – Source On Resistance
Gate Forward Voltage
DC Current Gain
Off State Characteristics
Drain Leakage Current
Gate Leakage Current
Symbol
Conditions
Min.
Value
Typical
Max. Unit
Notes
RDS(ON)
VGS(FWD)
hFE
ID = 8 A, Tj = 25 °C
ID = 8 A, Tj = 125 °C
ID = 8 A, Tj = 175 °C
IG = 500 mA, Tj = 25 °C
IG = 500 mA, Tj = 175 °C
VDS = 5 V, ID = 8 A, Tj = 25 °C
VDS = 5 V, ID = 8 A, Tj = 175 °C
230
410 mΩ Fig. 5
560
3.0
2.8
V Fig. 4
60
40
– Fig. 5
IDSS
ISG
VR = 1700 V, VGS = 0 V, Tj = 25 °C
VR = 1700 V, VGS = 0 V, Tj = 125 °C
VR = 1700 V, VGS = 0 V, Tj = 175 °C
VSG = 20 V, Tj = 25 °C
0.2 10
0.5
50 μA
Fig. 6
2.0 100
20 nA
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 1 of 10
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GA08JT17-247
Figure 15: Forward Bias Safe Operating Area at Tc = 25 °C
Figure 16: Turn-Off Safe Operating Area
Figure 17: Transient Thermal Impedance
Figure 18: Drain Current Derating vs. Pulse Width
Figure 19: Drain Current Derating vs. Temperature
Figure 20: Typical Gate Current Waveform
Aug 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg 5 of 10
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GA08JT17-247 electronic component. |
Information | Total 11 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ GA08JT17-247.PDF Datasheet ] |
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