GA05JT01-46 Datasheet PDF - GeneSiC
Part Number | GA05JT01-46 | |
Description | Junction Transistor | |
Manufacturers | GeneSiC | |
Logo | ||
There is a preview and GA05JT01-46 download ( pdf file ) link at the bottom of this page. Total 11 Pages |
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Normally – OFF Silicon Carbide
Junction Transistor
Features
225°C maximum operating temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Compatible with 5 V TTL Gate Drive
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Package
RoHS Compliant
D
SG
TO-46
VDS =
RDS(ON)
=
ID (Tc = 25°C) =
hFE (Tc = 25°C) =
100 V
240 mΩ
9A
110
D
G
S
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA05JT01-46...............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 10
Section VII: SPICE Model Parameters ......................................................................................................... 11
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25°C
TVJ = 225°C, IG = 0.5 A,
Clamped Inductive Load
TVJ = 225°C, IG = 0.5 A, VDS = 70 V,
Non Repetitive
TJ = 225°C, TC = 25°C
Value
100
5.8
0.5
ID,max = 9
@ VDS ≤ VDSmax
>20
30
25
20
-55 to 225
Unit
V
A
A
A
µs
V
V
W
°C
Notes
Fig. 21
Fig. 19
Fig. 16
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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GA05JT01-46
Figure 13: Typical Turn On Energy Losses and Switching
Times vs. Drain Current
C: Current and Power Derating
Figure 14: Typical Turn Off Energy Losses and Switching
Times vs. Drain Current
Figure 15: Typical Hard Switched Device Power Loss vs.
Switching Frequency 2
Figure 16: Power Derating Curve
Figure 17: Drain Current Derating vs. Temperature
Figure 18: Forward Bias Safe Operating Area at Tc= 25 oC
2 – Representative values based on device conduction and switching loss. Actual losses will depend on gate drive conditions, device load, and circuit topology.
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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Information | Total 11 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ GA05JT01-46.PDF Datasheet ] |
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