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PDF GA50JT06-258 Data sheet ( Hoja de datos )
| Número de pieza | GA50JT06-258 | |
| Descripción | Junction Transistor | |
| Fabricantes | GeneSiC | |
| Logotipo |  |
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GA50JT06-258
Normally – OFF Silicon Carbide
Junction Transistor
Features
225°C maximum operating temperature
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Compatible with 5 V TTL Gate Drive
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
D
TO-258
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
600 V
25 mΩ
100 A
105
D
G
S
D
G
S
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the GA50JT06-247.............................................................................................................7
Section VI: Package Dimensions ................................................................................................................. 10
Section VII: SPICE Model Parameters ......................................................................................................... 11
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and Storage Temperature
Symbol
VDS
ID
IGM
RBSOA
SCSOA
VSG
VSD
Ptot
Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25°C
TJ = 225°C, IG = 3.5 A,
Clamped Inductive Load
TJ = 225°C, IG = 3.5 A, VDS = 400 V,
Non Repetitive
TJ = 225°C, TC = 25°C
Value
600
100
3.5
ID,max = 50
@ VDS ≤ VDSmax
>20
30
25
769
-55 to 225
Unit
V
A
A
A
µs
V
V
W
°C
Notes
Fig. 21
Fig. 19
Fig. 16
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg1 of 10
1 page  
GA50JT06-258
Figure 13: Typical Turn On Energy Losses and Switching
Times vs. Drain Current
Figure 14: Typical Turn Off Energy Losses and Switching
Times vs. Drain Current
Figure 15: Typical Hard Switched Device Power Loss vs.
Switching Frequency 2
Figure 16: Power Derating Curve
Figure 17: Drain Current Derating vs. Temperature
Figure 18: Forward Bias Safe Operating Area at Tc= 25 oC
2 – Representative values based on device conduction and switching loss. Actual losses will depend on gate drive conditions, device load, and circuit topology.
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
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5 Page 
Section VII: SPICE Model Parameters
GA50JT06-258
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/hit_sic/sjt/GA50JT06-258_SPICE.pdf) into LTSPICE (version 4) software for simulation of the
GA50JT06-258.
* MODEL OF GeneSiC Semiconductor Inc.
*
* $Revision: 1.3
$
* $Date: 12-DEC-2014
$
*
* GeneSiC Semiconductor Inc.
* 43670 Trade Center Place Ste. 155
* Dulles, VA 20166
*
* COPYRIGHT (C) 2014 GeneSiC Semiconductor Inc.
* ALL RIGHTS RESERVED
*
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY
* OF ANY KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITED
* TO ANY IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A
* PARTICULAR PURPOSE."
* Models accurate up to 2 times rated drain current.
*
.model GA50JT06 NPN
*
+ IS
5.00E-47
+ ISE
1.26E-26
+ EG
3.23
+ BF
106
+ BR
0.55
+ IKF
9000
+ NF
1
+ NE
2
+ RB
0.9
+ IRB
0.002
+ RBM
0.09
+ RE
0.01
+ RC
0.013
+ CJC
2.3989E-9
+ VJC
2.8346223
+ MJC
0.4846
+ CJE
6.026E-09
+ VJE
3.17915435
+ MJE
0.52951635
+ XTI
3
+ XTB
-1.2
+ TRC1
7.00E-3
+ VCEO
600
+ ICRATING
100
+ MFG
GeneSiC_Semiconductor
*
* End of GA50JT06 SPICE Model
Dec 2014
http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
Pg1 of 1
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet GA50JT06-258.PDF ] | |
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