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Número de pieza | 2N7638-GA | |
Descripción | Junction Transistor | |
Fabricantes | GeneSiC | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 2N7638-GA (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! 2N7638-GA
Normally – OFF Silicon Carbide
Junction Transistor
Features
225°C maximum operating temperature
Electrically Isolated Base Plate
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
600 V
170 mΩ
20 A
110
S
G
D
G
SMD0.5 / TO – 276 (Hermetic Package)
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
D
S
Table of Contents
Section I: Absolute Maximum Ratings ...........................................................................................................1
Section II: Static Electrical Characteristics....................................................................................................2
Section III: Dynamic Electrical Characteristics .............................................................................................2
Section IV: Figures ...........................................................................................................................................3
Section V: Driving the 2N7638-GA ..................................................................................................................5
Section VI: Package Dimensions: ...................................................................................................................8
Section VII: SPICE Model Parameters ............................................................................................................9
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Continuous Gate Current
Turn-Off Safe Operating Area
Symbol
VDS
ID
IGM
RBSOA
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and Storage Temperature
SCSOA
VGS
VDS
Ptot
Tj, Tstg
Conditions
VGS = 0 V
TJ = 225°C, TC = 25°C
TVJ = 225°C, IG = 1.25 A,
Clamped Inductive Load
TVJ = 225°C, IG = 1.25 A, VDS = 400 V,
Non Repetitive
TJ = 225°C, TC = 25°C
Values
600
20
1.25
ID,max = 20
@ VDS ≤ VDSmax
>20
30
40
200
-55 to 225
Unit
V
A
A
A
µs
V
V
W
°C
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 1 of 8
1 page 2N7638-GA
Section V: Driving the 2N7638-GA
The 2N7638-GA is a current controlled SiC transistor which requires a positive gate current for turn-on and to remain in on-state. It may be
driven by different drive topologies depending on the intended application.
Table 1: Estimated Power Consumption and switching frequencies for various Gate Drive topologies.
Drive Topology
Gate Drive Power Switching
Consumption
Frequency
Simple TTL
High
Low
Constant Current
High Speed – Boost Capacitor
High Speed – Boost Inductor
Medium
Medium
Low
Medium
High
High
Proportional
Lowest
Medium
Pulsed Power
Medium
N/A
A: Simple TTL Drive
The 2N7638-GA may be driven by 5 V TTL logic using a simple current amplification stage. The current amplifier output current must meet or
exceed the steady state gate current, IG,steady, required to operate the 2N7638-GA. An external gate resistor RG, shown in the
Figure 11 topology, sets IG,steady to the required level which is dependent on the SJT drain current ID and DC current gain hFE, RG may be
calculated from the equation below. The value of VEC,sat can be taken from the PNP datasheet, a partial list of high-temperature PNP and NPN
transistors options is given below. High-temperature MOSFETs may also be used in the topology.
Inverting 5 V
Current
Boost
Stage
TTL
Gate Signal
PNP
IG,steady
SiC SJT
G
0/5V
TTL i/p
inverted
0/5V
TTL o/p
NPN
RG
D
S
Figure 11: Simple TTL Gate Drive Topology
Table 2: Partial List of High-Temperature BJTs for TTL Gate Driving
BJT Part Number
Type
Tj,max (°C)
PHPT60603PY
PHPT60603NY
2N2222
2N6730
2N2905
2N5883
2N5885
PNP
NPN
NPN
PNP
PNP
PNP
NPN
175
175
200
200
200
200
200
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 5 of 8
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet 2N7638-GA.PDF ] |
Número de pieza | Descripción | Fabricantes |
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