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PDF HDS20U20AW Data sheet ( Hoja de datos )

Número de pieza HDS20U20AW
Descripción Ultra Fast Recovery Diode
Fabricantes SemiHow 
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August 2015
HDS20U20AW
Ultra Fast Recovery Diode
General Description
The HDS20U20AW is ideally as boost diode in discontinuous or critical
mode power factor corrections.
The planar structure and the platinum doper life time control guarantee the
best overall performance, ruggedness reliability characteristics. The device
is also intended for use as a freewheeling diode in power supplies and
other power switching applications.
Features
‰ Low forward drop voltage
‰ Dual common cathode rectifier construction
‰ Ultrafast recovery time and high speed switching
VRRM = 200 V
IF = 2 x 10A
trr = 19nS
TO-220F
12 3
1 23
Pin 1, 3 : Anode
Pin 2 : Cathode
Absolute Maximum Ratings TA=25πC unless otherwise noted
Symbol
Parameter
VRRM
VR
Peak Repetitive Reverse Voltage
DC Blocking Voltage
IF(AV) Average Rectifier Forward Current
(Per Diode)
(Total Diode)
IFSM
TJ, TSTG
Non-Rectifier Peak Surge Current @8.3ms (Per Diode)
Operating and Storage Temperature Range
Value
200
10
20
130
-45 to +150
Electrical Characteristics (Per Diode)
Symbol
Parameter
VF Forward Voltage
IR Reverse Current
trr Reverse Recovery Time
Cj Junction Capacitance
Test Conditions
IF = 10A, TJ = 25
VR = 200V, TJ = 25
VR = 200V, TJ = 125
IF $GLGW $ȝV
VR = 10V, f=1MHz
Thermal Resistance Characteristics
Symbol
Parameter
RșJC Junction-to-Case (Per Diode)
Min Typ Max
-- 0.93 0.98
-- -- 5
-- -- 200
-- 19 25
-- 60 --
Typ.
--
Max.
4.0
Unit
V
A
A
Unit
V
uA
ns
pF
Unit
/W
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