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PDF HTB1A80 Data sheet ( Hoja de datos )
| Número de pieza | HTB1A80 | |
| Descripción | TRIAC | |
| Fabricantes | SemiHow | |
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HTB1A60/HTB1A80
4 Quadrants Sensitive TRIAC
FEATURES
Repetitive Peak Off-State Voltage : 600V/800V
R.M.S On–State Current (IT(RMS) = 1A)
Sensitive Gate Trigger Current
- 5[mA] of IGT at I, II and III Quadrants.
- 12[mA] of IGT at IV Quadrant.
VDRM = 600V/800V
IT(RMS) = 1 A
ITSM = 13 A
IGT = 5mA/12mA
Symbol
TO-92
Applications
AC power or phase control through low output current of MCU or IC
suck like Heater, Solenoid valve control, etc.
General Description
Semihow’s sensitive TRIAC product is a glass passivated device,
has a low gate trigger current, high stability in gate trigger current to
variation of operating temperature and high off state voltage. It is
generally suitable for power and phase control in ac application.
T1
G
T2
Absolute Maximum Ratings
Symbol
Parameter
VDRM
VRRM
IT(AV)
IT(RMS)
Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Average On-State Current
R.M.S. On-State Current
ITSM Surge On-State Current
(TJ=25℃ unless otherwise specified )
Conditions
Ratings
HTB1A60 HTB1A80
Sine wave, 50/60Hz, Gate open
600
600
800
800
Full sine wave, TC = 72oC
0.9
1
½ cycle, 50Hz/60Hz, Sine wave,
Non repetitive
12/13
I2t Fusing Current
t = 10ms
0.7
PGM
Forward Peak Gate Power
Dissipation
TJ = 125 °C
2
Unit
V
V
A
A
A
A2S
W
PG(AV)
Forward Average Gate Power
Dissipation
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TJ = 125 °C, over any 20ms
TJ = 125 °C, pulse width ≤ 20us
TJ = 125 °C, pulse width ≤ 20us
0.2 W
0.5
6
-40~+125
-40~+150
A
V
oC
oC
◎ SEMIHOW REV.A1,March 2013
1 page  
Package Dimension
TO-92 BULK
0.46±0.1
4.58±0.25
4°
3.71±0.2
1.27typ
1.27typ
3.6±0.25
◎ SEMIHOW REV.A1,March 2013
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HTB1A80.PDF ] | |
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