PDF HCU7N70S Data sheet ( Hoja de datos )

Número de pieza	HCU7N70S
Descripción	N-Channel MOSFET
Fabricantes	SemiHow
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No Preview Available ! HCU7N70S 700V N-Channel Super Junction MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 9 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.95 ȍ7\S#9GS=10V 100% Avalanche Tested Sep 2014 BVDSS = 700 V RDS(on) typ = 0.95 ȍ ID = 5.0 A I-PAK 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Static AC (f>1 Hz) 700 5.0 3.2 13.0 ρ20 ρ30 EAS IAR EAR dv/dt Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) (Note 1) (Note 1) (Note 3) 40 1.2 0.1 50 PD TJ, TSTG TL Power Dissipation (TC = 25୅) Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds 28 -55 to +150 300 Thermal Resistance Characteristics Symbol RșJC RșJA Tsold Parameter Junction-to-Case Junction-to-Ambient Soldering temperature, wave soldering only allowed at leads Typ. -- -- -- Max. 4.4 60.5 260 Units V A A A V V mJ A mJ V/ns W ୅ ୅ Units ୅/W ୅ క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͤ͝΄ΖΡ͑ͣͥ͑͢͡ 1 page Fig 12. Gate Charge Test Circuit & Waveform Same Type .ȍ as DUT 12V 200nF 300nF VGS 10V Qg VGS VDS Qgs Qgd DUT 3mA Charge 10V 10V Fig 13. Resistive Switching Test Circuit & Waveforms VDS RG RL VDD ( 0.5 rated VDS ) DUT VDS 90% 10% Vin td(on) tr t on td(off) tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms VDS ID RG L VDD EAS = --1-- 2 LL IAS2 BVDSS -------------------- BVDSS -- VDD BVDSS IAS ID (t) DUT VDD VDS (t) t p Time క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳͤ͝΄ΖΡ͑ͣͥ͑͢͡ 5 Page

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Número de pieza	Descripción	Fabricantes
HCU7N70S	N-Channel MOSFET	SemiHow

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