HRP85N06K Datasheet PDF - SemiHow
Part Number | HRP85N06K | |
Description | N-Channel MOSFET | |
Manufacturers | SemiHow | |
Logo | ||
There is a preview and HRP85N06K download ( pdf file ) link at the bottom of this page. Total 8 Pages |
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60V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 73 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 7 Pȍ (Typ.) @VGS=10V
100% Avalanche Tested
November 2014
BVDSS = 60 V
RDS(on) typ = 7 Pȍ
ID = 80 A
TO-220
1
23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
60
80
56
280
ρ25
250
15
150
1.0
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
Units
V
A
A
A
V
mJ
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJC
RșCS
RșJA
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Typ.
--
0.5
--
Max.
1.0
--
62.5
Units
/W
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Fig 12. Gate Charge Test Circuit & Waveform
Same Type
.ȍ
as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HRP85N06K electronic component. |
Information | Total 8 Pages | |
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Download | [ HRP85N06K.PDF Datasheet ] |
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