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PDF SSM6618M Data sheet ( Hoja de datos )
| Número de pieza | SSM6618M | |
| Descripción | N-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM6618M
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Fast switching speed
Surface-mount package
Description
D
D
D
D
SO-8
G
SS
S
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV DSS
RDS(ON)
ID
25V
30mΩ
7A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating
25
± 20
7
5.8
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
50
Unit
°CW
Rev.2.02 3/21/2004
www.SiliconStandard.com
1 of 6
1 page  
SSM6618M
12
I D =7A
9
6
VDS =12V
VDS =16V
VDS =20V
3
10000
1000
100
f=1.0MHz
Ciss
Coss
Crss
0
0 4 8 12 16
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
10
1
7 13 19 25 31
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
Tj=150 o C
1
Tj=25 o C
0.1
0.01
0
0.4 0.8
V SD (V)
1.2
Fig 11. Forward Characteristic of
Reverse Diode
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 3/21/2004
www.SiliconStandard.com
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM6618M.PDF ] | |
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