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PDF SSM9475M Data sheet ( Hoja de datos )

Número de pieza SSM9475M
Descripción N-channel Enhancement-mode Power MOSFET
Fabricantes Silicon Standard 
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SSM9475M
N-channel Enhancement-mode Power MOSFET
Simple drive requirement
Lower gate charge
Fast switching characteristics
G
D
S
BVDSS
R DS(ON)
ID
60V
40m
6.9A
DESCRIPTION
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SSM9475M is in the SO-8 package, which is widely preferred for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters.
D
D
D
D
SO-8
G
S
S
S
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID @ TA=25°C
ID @ TA=100°C
IDM
PD @ TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
60
± 25
6.9
5.5
30
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
50
Unit
°C/W
3/21/2005 Rev.2.01
www.SiliconStandard.com
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SSM9475M pdf
SSM9475M
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
3/21/2005 Rev.2.01
www.SiliconStandard.com
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