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PDF SSM9926EM Data sheet ( Hoja de datos )
| Número de pieza | SSM9926EM | |
| Descripción | N-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM9926EM
N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Surface-mount package
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
BV DSS
RDS(ON)
ID
20V
30mΩ
6A
D1 D2
G1 G2
S1 S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating
20
±12
6
4.8
20
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
62.5
Unit
°C/W
Rev.2.02 1/29/2004
www.SiliconStandard.com
1 of 6
1 page  
SSM9926EM
12
I D =6A
9
6
V DS =10V
V DS =15V
V DS =20V
3
0
0 5 10 15 20 25
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1
8 15 22 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0
0.4 0.8 1.2
V SD (V)
1.6
Fig 11. Forward Characteristic of
Reverse Diode
1.5
1.2
0.9
0.6
0.3
-50 0 50 100 150
T j , Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 1/29/2004
www.SiliconStandard.com
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM9926EM.PDF ] | |
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