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What is SSM2030GM?

This electronic component, produced by the manufacturer "Silicon Standard", performs the same function as "N- and P-channel Enhancement-mode Power MOSFET".


SSM2030GM Datasheet PDF - Silicon Standard

Part Number SSM2030GM
Description N- and P-channel Enhancement-mode Power MOSFET
Manufacturers Silicon Standard 
Logo Silicon Standard Logo 


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SSM2030GM
N- and P-channel Enhancement-mode Power MOSFETs
Simple drive requirement
Lower gate charge
Fast switching characteristics
Pb-free; RoHS compliant.
DESCRIPTION
D2
D2
D1 D2
D1 D1
D1
SO-8
G2
S2G2
G1 S2
S1
S1
G1
N-CH
P-CH
BV DSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching, ruggedized
device design, low on-resistance and cost-effectiveness.
The SSM2030GM is in an SO-8 package, which is widely preferred
G1
for commercial and industrial surface mount applications. This device is
suitable for low voltage applications requiring complementary N and P MOSFETs.
D1
G2
S1
20V
30m
6A
-20V
50m
-5A
D2
S2
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS
VGS
I D @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient
Rating
N-channel P-channel
20 -20
±8 ±8
+6 -5
+4.8 -4
+20 -20
2.0
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
2/10/2005 Rev.2.01
www.SiliconStandard.com
1 of 11

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SSM2030GM equivalent
N-channel
8
7
6
5
4
3
2
1
0
25 50 75 100 125 150
T c , Case Temperature ( oC)
Fig 5. Maximum Drain Current vs.
Case Temperature
SSM2030GM
3
2
1
0
0 50 100 150
T c ,Case Temperature ( oC)
Fig 6. Typical Power Dissipation
100
1ms
10
10ms
1
T c=25 oC
Single Pulse
0.1
0.1
1 10
V DS (V)
100ms
10us
100
1
DUTY=0.5
0.2
0.1
0.01
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
0.001
0.0001
0.001
0.01 0.1
1
t , Pulse Width (s)
10
100 1000
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
2/10/2005 Rev.2.01
www.SiliconStandard.com
5 of 11


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for SSM2030GM electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
SSM2030GMThe function is N- and P-channel Enhancement-mode Power MOSFET. Silicon StandardSilicon Standard

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