(PDF) SSM2306N Datasheet - N-channel Enhancement-mode Power MOSFET

Número de pieza	SSM2306N
Descripción	N-channel Enhancement-mode Power MOSFET
Fabricantes	Silicon Standard
Logotipo
Hay una vista previa y un enlace de descarga de SSM2306N (archivo pdf) en la parte inferior de esta página. Total 4 Páginas
No Preview Available ! SSM2306N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.5V gate-drive Lower on-resistance Surface-mount package Description D SOT-23 G S BVDSS RDS(ON) ID Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device. The SOT-23 package is widely used for commercial and industrial applications. G 20V 32mΩ 5.3A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ± 12 5.3 4.3 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max. Value 90 Unit °C/W Rev.2.02 3/16/2004 www.SiliconStandard.com 1 of 4 1 page

Páginas	Total 4 Páginas
PDF Descargar	[ Datasheet SSM2306N.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF SSM2306N Data sheet ( Hoja de datos )