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PDF SSM2302N Data sheet ( Hoja de datos )
| Número de pieza | SSM2302N | |
| Descripción | N-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM2302N
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Capable of 2.5V gate drive
Small package outline
Surface-mount package
Description
D
SOT-23 G
S
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BV DSS
RDS(ON)
ID
20V
85mΩ
2.8A
D
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Current3, VGS @ 4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
G
S
Rating
20
± 12
2.8
2.2
10
1.25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
100
Unit
°C/W
Rev.2.02 3/12/2004
www.SiliconStandard.com
1 of 6
1 page  
SSM2302N
12
I D =3.6A
10 V DS =4.5V
8
6
4
2
0
0123456789
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
100
Coss
Crss
10
1 5 9 13 17 21 25 29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100.0
10.0
T j =150 o C
T j =25 o C
1.0
0.1
0.1
0.5 0.9
V SD (V)
1.3
Fig 11. Forward Characteristic of
Reverse Diode
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 3/12/2004
www.SiliconStandard.com
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM2302N.PDF ] | |
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