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PDF SSM2304N Data sheet ( Hoja de datos )
| Número de pieza | SSM2304N | |
| Descripción | N-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM2304N
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Small package outline
Surface-mount package
D
Description
SOT-23 G
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
S
BV DSS
R DS(ON)
ID
25V
117mΩ
2.5A
D
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
G
S
Rating
25
±20
2.5
2
10
1.25
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
100
Unit
°C/W
Rev.2.02 3/11/2004
www.SiliconStandard.com
1 of 6
1 page  
10
V DS =15V
I D =2.5A
8
6
4
2
0
0123456
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
SSM2304N
1000
f=1.0MHz
100 Ciss
Coss
Crss
10
1 5 9 13 17 21 25 29
VDS (V)
Fig 10. Typical Capacitance Characteristics
10
T j =150 o C
1
T j =25 o C
0
0.1 0.5 0.9 1.3
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
2.25
2.05
1.85
1.65
1.45
-50
0 50 100
Junction Temperature ( o C )
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
150
Rev.2.02 3/11/2004
www.SiliconStandard.com
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM2304N.PDF ] | |
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