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PDF SSM2318GEN Data sheet ( Hoja de datos )
| Número de pieza | SSM2318GEN | |
| Descripción | N-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
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SSM2318GEN
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
30V
720mΩ
1A
Pb-free; RoHS-compliant SOT-23-3
D
S
SOT-23-3 G
DESCRIPTION
The SSM2318GEN acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM2318GEN is supplied in an RoHS-compliant
SOT-23-3 package, which is widely used for lower
power commercial and industrial surface mount
applications.
The gate has internal ESD protection.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current 3, T A = 25°C
Pulsed drain current 1,2
TA = 70°C
Total power dissipation 3, TA = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJA
Parameter
Maximum thermal resistance, junction-ambient3
Value
30
± 16
1
800
2
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
mA
A
W
W/°C
°C
°C
Value
90
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board ; 270°C/W when mounted on the minimum pad area required for soldering.
6/16/2006 Rev.3.01
www.SiliconStandard.com
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1 page  
PHYSICAL DIMENSIONS
SOT-23-3
PART MARKING
NMXX
SSM2318GEN
SOT-23-3
SYMBOL MILLIMETERS
MIN. MAX.
A 0.89 1.45
A1 0 0.15
A2 0.70 1.30
b 0.30 0.50
c 0.08 0.25
D 2.65 3.10
E 2.10 3.00
E1 1.19 2.30
e 0.95BSC
e1 1.90BSC
L 0.30 0.60
L1 0.60REF
Θ 0° 8°
*Dimensions do not include mold protrusions.
PART NUMBER CODE: NM = SSM2318GEN
First character is underlined to indicate Pb-free part
XX = DATE/LOT CODE - contact SSC for
information on decoding this.
PACKING: Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a reel packed in a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
6/16/2006 Rev.3.01
www.SiliconStandard.com
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