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PDF SSM2305GN Data sheet ( Hoja de datos )

Número de pieza SSM2305GN
Descripción P-channel Enhancement-mode Power MOSFET
Fabricantes Silicon Standard 
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No Preview Available ! SSM2305GN Hoja de datos, Descripción, Manual

SSM2305GN
P-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Pb-free; RoHS compliant.
DESCRIPTION
D
G
S
BV DSS
R DS(ON)
ID
D
The SSM2305GN is in a SOT-23-3 package, which is widely used for lower
power commercial and industrial surface mount applications. This device is
suitable for low-voltage applications such as DC/DC converters and and
general switching applications.
SOT-23-3
-20V
65m
-4.2A
S
G
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID @ TA=25°C
ID @ TA=70°C
IDM
PD @ TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
RΘJA
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
-20
± 12
-4.2
-3.4
-10
1.38
0.01
-55 to 150
-55 to 150
Value
90
Units
V
V
A
A
A
W
W/°C
°C
°C
Unit
°C/W
2/16/2005 Rev.2.1
www.SiliconStandard.com
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SSM2305GN pdf
SSM2305GN
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
2/16/2005 Rev.2.1
www.SiliconStandard.com
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