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Número de pieza | SSM2602GY | |
Descripción | N-channel Enhancement-mode Power MOSFET | |
Fabricantes | Silicon Standard | |
Logotipo | ||
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No Preview Available ! SSM2602GY
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Capable of 2.5V gate drive
Lower on-resistance
Surface mount package
RoHS Compliant
DESCRIPTION
S
D
D
SOT-26
G
D
D
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-26 package is universally used for all commercial–industrial
applications.
BVDSS
RDS(ON)
ID
G
20V
34mΩ
6.3A
D
S
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
20
±12
6.3
5
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
62.5
Unit
℃/W
11/16/2007 Rev.1.00
www.SiliconStandard.com
1
1 page SSM2602GY
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
11/16/2007 Rev.1.00
www.SiliconStandard.com
5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet SSM2602GY.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM2602GY | N-channel Enhancement-mode Power MOSFET | Silicon Standard |
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