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PDF SSM2761P-A Data sheet ( Hoja de datos )
| Número de pieza | SSM2761P-A | |
| Descripción | N-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM2761P-A
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Lower On-resistance
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant
DESCRIPTION
D
G
S
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,AC-DC
converters for power applications.
BVDSS
RDS(ON)
ID
650V
1Ω
10A
Pb-free; RoHS-compliant
G
D
S
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
IAR
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
Rating
650
±30
10
4.4
18
104
0.8
10
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
A
℃
℃
Max.
Max.
Value
1.2
62
Units
℃/W
℃/W
05/25/2007 Rev.1.00
www.SiliconStandard.com
1
1 page  
SSM2761P-A
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
05/25/2007 Rev.1.00
www.SiliconStandard.com
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