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PDF SSM9916J Data sheet ( Hoja de datos )
| Número de pieza | SSM9916J | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM9916H,J
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low on-resistance
Capable of 2.5V gate drive
Low drive current
Simple drive requirement
Description
D
G
S
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TC=25°C
ID @ TC=125°C
IDM
PD @ TC=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-case
Rthj-a
Thermal Resistance Junction-ambient
BV DSS
RDS(ON)
ID
18V
25mΩ
35A
GD S
TO-252(H)
GD
S
TO-251(J)
Rating
18
± 12
35
16
90
50
0.4
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Max.
Value
2.5
110
Unit
°C/W
°C/W
Rev.2.02 1/29/2004
www.SiliconStandard.com
1 of 6
1 page  
SSM9916H,J
16
I D =18A
14
12 V DS =10V
V DS =15V
10
V DS =18V
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
1000
Ciss
Coss
100 Crss
10
1
5
9
V
13
DS
(V)
17
21
25
Fig 10. Typical Capacitance Characteristics
100
10
T j =150 o C
1
T j =25 o C
0.1
0.01
0
0.4 0.8 1.2
V SD (V)
1.6
Fig 11. Forward Characteristic of
Reverse Diode
1.2
0.95
0.7
0.45
0.2
-50
0 50 100
T j , Junction Temperature ( o C )
150
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 1/29/2004
www.SiliconStandard.com
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM9916J.PDF ] | |
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