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PDF SSM25T03GJ Data sheet ( Hoja de datos )
| Número de pieza | SSM25T03GJ | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Silicon Standard | |
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SSM25T03GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
30V
35mΩ
20A
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
D
S
TO-251 (suffix J)
GD
S
TO-252 (suffix H)
DESCRIPTION
The SSM25T03 acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM25T03GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM250T03GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
TSTG
TJ
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
Value
30
±20
20
12
45
20
0.16
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
RΘJC
RΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
2.Pulse width <300us, duty cycle <2%.
Value
6
110
Units
°C/\W
°C/W
10/2/2006 Rev.3.1
www.SiliconStandard.com
1 of 6
1 page  
SSM25T03GH,J
PHYSICAL DIMENSIONS: TO-251 (I-PAK)
D
D1
E2
E1 E
B2
B1 F
F1
A
c1
A1
SYMBOLS
A
A1
B1
B2
c
c1
D
D1
E
E1
E2
e
F
F1
Millimeters
MIN NOM MAX
2.20 2.30 2.40
0.90 1.20 1.50
0.50 0.60 0.70
0.60 0.72 0.90
0.45 0.50 0.60
0.45 0.50 0.55
6.40 6.60 6.80
5.20 5.35 5.50
6.80 7.00 7.20
5.40 5.60 5.80
1.40 1.50 1.60
-- 2.30 --
7.20 7.50 7.80
1.50 1.60 1.80
ee
c
PHYSICAL DIMENSIONS: TO-252 (D-PAK)
E
b3
A
e
GAUGE PLANE
A
c2
A
SEE VIEW B
WITH PLATING
b
BASE METAL
SECTION A-A
L
L1
VIEW B
SEATING PLANE
S
Y
M
B
O
L
A
A1
b
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
θ
1.All dimensions are in millimeters.
2.Dimensions do not include mold protrusions.
TO-252-3L
MILLIMETERS
MIN.
1.80
0.00
0.40
4.80
0.35
0.40
5.10
6.00
2.30 BSC
7.80
1.00
2.20
0.35
0.50
0.50
0°
MAX.
2.80
0.13
1.00
5.90
0.65
0.89
6.30
7.00
11.05
2.55
3.05
0.65
2.03
1.20
8°
10/2/2006 Rev.3.1
www.SiliconStandard.com
5 of 6
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| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM25T03GJ.PDF ] | |
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