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PDF SSM90T03GH Data sheet ( Hoja de datos )

Número de pieza SSM90T03GH
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Silicon Standard 
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SSM90T03GH,J
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Pb-free; RoHS compliant.
DESCRIPTION
D
G
S
BVDSS
R DS(ON)
ID
30V
4m
75A
The SSM90T03GH is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM90T03GJ in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
G D S TO-252 (H)
G
D
S
TO-251 (J)
Symbol
VDS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
EAS
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Rating
30
±20
75
63
350
96
0.7
29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
Max.
Max.
Value
1.3
110
Units
°C/W
°C/W
5/17/2005 Rev.2.4
www.SiliconStandard.com
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SSM90T03GH pdf
SSM90T03GH,J
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
5/17/2005 Rev.2.4
www.SiliconStandard.com
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