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Número de pieza | SSM9980GH | |
Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
Fabricantes | Silicon Standard | |
Logotipo | ||
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No Preview Available ! SSM9980GH,J
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BVDSS
R DS(ON)
ID
80V
45mΩ
21A
Pb-free; RoHS-compliant TO-251 (IPAK)
and TO-252 (DPAK)
G
D
S
TO-251 (suffix J)
GD
S
TO-252 (suffix H)
DESCRIPTION
The SSM9980Gx acheives fast switching performance
with low gate charge without a complex drive circuit. It is
suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM9980GH is in a TO-252 package, which is
widely used for commercial and industrial surface-mount
applications.
The through-hole version, the SSM9980GJ in TO-251,
is available for vertical mounting, where a small footprint
is required on the board, and/or an external heatsink is
to be attached.
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID
IDM
PD
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current, TC = 25°C
Pulsed drain current1
TC = 100°C
Total power dissipation, TC = 25°C
Linear derating factor
TSTG
TJ
Storage temperature range
Operating junction temperature range
THERMAL CHARACTERISTICS
Symbol
RΘJC
RΘJA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Notes:
1.Pulse width must be limited to avoid exceeding the safe operating area.
Value
80
±25
21
13.4
80
41
0.33
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Value
3.0
110
Units
°C/W
°C/W
9/19/2006 Rev.3.1
www.SiliconStandard.com
1 of 6
1 page SSM9980GH,J
PHYSICAL DIMENSIONS: TO-251 (I-PAK)
D
D1
E2
E1 E
B2
B1 F
F1
A
c1
A1
SYMBOLS
A
A1
B1
B2
c
c1
D
D1
E
E1
E2
e
F
F1
Millimeters
MIN NOM MAX
2.20 2.30 2.40
0.90 1.20 1.50
0.50 0.60 0.70
0.60 0.72 0.90
0.45 0.50 0.60
0.45 0.50 0.55
6.40 6.60 6.80
5.20 5.35 5.50
6.80 7.00 7.20
5.40 5.60 5.80
1.40 1.50 1.60
-- 2.30 --
7.20 7.50 7.80
1.50 1.60 1.80
ee
c
PHYSICAL DIMENSIONS: TO-252 (D-PAK)
E
b3
A
e
GAUGE PLANE
A
c2
A
SEE VIEW B
WITH PLATING
b
BASE METAL
SECTION A-A
L
L1
VIEW B
SEATING PLANE
S
Y
M
B
O
L
A
A1
b
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
θ
1.All dimensions are in millimeters.
2.Dimensions do not include mold protrusions.
TO-252-3L
MILLIMETERS
MIN.
1.80
0.00
0.40
4.80
0.35
0.40
5.10
6.00
2.30 BSC
7.80
1.00
2.20
0.35
0.50
0.50
0°
MAX.
2.80
0.13
1.00
5.90
0.65
0.89
6.30
7.00
11.05
2.55
3.05
0.65
2.03
1.20
8°
9/19/2006 Rev.3.1
www.SiliconStandard.com
5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSM9980GH.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSM9980GH | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Silicon Standard |
SSM9980GJ | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Silicon Standard |
SSM9980GM | Dual N-channel Enhancement-mode Power MOSFET | Silicon Standard |
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