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PDF SSM3310GH Data sheet ( Hoja de datos )
| Número de pieza | SSM3310GH | |
| Descripción | P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM3310GH,J
P-channel Enhancement-mode Power MOSFET
2.5V low gate drive capability
Simple drive requirement
Fast switching
Pb-free; RoHS compliant.
DESCRIPTION
G
D
S
The SSM3310GH is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for use in low voltage battery applications. The through-hole version,
the SSM3310GJ in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
BV DSS
R DS(ON)
ID
-20V
150mΩ
-10A
G D S TO-252 (H)
G
D
S
TO-251 (J)
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VGS
ID @ TC=25°C
ID @ TC=100°C
IDM
PD @ TC=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Rating
-20
± 12
-10
-6.2
-24
25
0.2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Max.
Value
5
110
Unit
°C/W
°C/W
2/16/2005 Rev.2.1
www.SiliconStandard.com
1 of 7
1 page  
5
I D =-2.8A
V DS =-6V
4
3
2
1
0
0246
Q G , Total Gate Charge (nC)
8
Fig 9. Gate Charge Characteristics
10
T j =150 o C
T j =25 o C
1
SSM3310GH,J
f=1.0MHz
1000
Ciss
Coss
100
Crss
10
1 3 5 7 9 11 13
-V DS (V)
Fig 10. Typical Capacitance Characteristics
1.5
1
0.5
0
0.3 0.5 0.7 0.9 1.1 1.3 1.5
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
0
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
150
2/16/2005 Rev.2.1
www.SiliconStandard.com
5 of 7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSM3310GH.PDF ] | |
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